TO-247
N - CHANNEL ENHANCEMENT MODE RF POWER MOSFET
D
G
S
ARF440
125W
50V 13.56MHz
ARF441
125W
50V 13.56MHz
THE ARF440 PIN-OUTS ARE MIRROR IMAGE OF THE ARF441.
MAXIMUM RATINGS
All Ratings: T
C
= 25
°
C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
The ARF440 and ARF441 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull
commercial, medical and industrial RF power amplifier applications.
·
Specified 50 Volt, 13.56 MHz Characteristics:
·
Output Power = 125 Watts.
·
Gain = 21dB (Typ.)
·
Efficiency = 63% (Typ.)
·
Low Cost Common Source RF Package.
·
Very High Breakdown for Improved Ruggedness.
·
Low Thermal Resistance.
·
Nitride Passivated Die for Improved Reliability.
Symbol
BV
DSS
V
DS
(ON)
I
DSS
I
GSS
g
fs
V
GS
(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250
µ
A)
On State Drain Voltage
1
(I
D
(ON) = 10A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125
°
C)
Gate-Source Leakage Current (V
GS
=
±
30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 10V, I
D
= 5.5A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 200mA)
MIN
TYP
MAX
150
6
250
1000
±
100
4
5
2
5
UNIT
Volts
µ
A
nA
mhos
Volts
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
R
JC
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C
= 25
°
C
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25
°
C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF440/441
150
150
11
±
30
167
0.75
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
°
C/W
°
C
RF OPERATION 1-15MHz
(
)
POWER MOS IV
®
050-4406 Rev C
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
+Vbias
V
DD
= 50V
I
dq
= 0.4A
RF
Output
RF
Input
L1
T1
2:1
C1
C2
R2
R1
3.3K
75-480pF
.1µF
Q1
C4
25-240pF
C5
C6
RFC1
T2
C9
C10
C11
+
.01µF
.1µF
10µF (50V)
3.3K
3.3K
R3
C7
C8
C3
.1µF
T3
BFC1
ATC"B"
.01µF
.01µF
ATC"B"
ATC"B"
.01µF
.01µF
ATC"B"
0.5µH
0.4µH
L2
Q2
Parts List
C1 = 75-480pF Compression Mica
C2, C3 & C10 = .1
µ
F @ 50V, Novacap #1210B104K500N
C4 = 25-240pF Compression Mica
C5, C6, C7, C8 & C9 = .01
µ
F @ 50V, Novacap #1210B103K500N
C11 = 10
µ
F @ 50V Electrolytic
R1, R2 & R3 = 1K
, 5%, 1/4W, Carbon
Q1 = ARF440
Q2 = ARF441
L1 = 7.5 T of #18AWG, ID = .438", L = 0.5
µ
H
L2 = 6.5 T of #18AWG, ID = .438", L = 0.4
µ
H
BFC1 = Balanced DC Feed Choke; 7 T of #18 stranded PTFE twisted pair on an Indiana General #F624-19-Q1 toroid.
µ
i = 125
RFC1 = 2 T of #18 stranded PTFE on a Fair-Rite #2677006301 shield bead.
µ
i = 2000
T1 = 4:1 Z Conventional Transformer; 2:1 T of #22 stranded PTFE on a Fair-Rite #2843000202 Balun Core.
µ
i = 850
T2 & 3 = 1:4 Z Transmission Line Transformer; 6 T of mini 25
PTFE coax on a Fair-Rite #2643102002 shield bead.
µ
i = 2000
PCB = .062" G10 Epoxy Glass.
DYNAMIC CHARACTERISTICS
ARF440/441
Symbol
C
iss
C
oss
C
rss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
GS
= 0V
V
DS
= 50V
f = 1 MHz
MIN
TYP
MAX
755
900
155
215
55
90
UNIT
pF
FUNCTIONAL CHARACTERISTICS
Symbol
G
PS
MIN
TYP
MAX
18
21
63
UNIT
dB
%
Test Conditions
V
DD
= 50V
P
out
= 125W
I
DQ
= 200mA
f = 13.56MHz
No Degradation in Output Power
Characteristic
Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 30:1
1
Pulse Test: Pulse width < 380
µ
S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL 13.56 MHz, 250 WATT PUSH-PULL POWER AMPLIFIER CIRCUIT
050-4406 Rev C
RF POWER IN (WATTS)
Figure 1, RF Power Out vs RF Power In
Figure 2, RF Power Out vs RF Power In
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
T
C
, CASE TEMPERATURE (
°
C)
Figure 2, Typical Transfer Characteristics
Figure 3, Threshold Voltage vs Temperature
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 4, Maximum DC Safe Operating Area
Figure 5, Breakdown Voltage vs Temperature
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Capacitance vs. Drain-To-Source Voltage
C, CAPACITANCE (pF)
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
RF POWER OUT (WATTS)
BV
DSS
(ON), DRAIN-TO-SOURCE BREAKDOWN
V
GS
(TH), THRESHOLD VOLTAGE
VOLTAGE (NORMALIZED)
(NORMALIZED)
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
2
4
6
8
10
-50
-25
0
25
50
75
100 125 150
1
5
10
50
100 150
-50
-25
0
25
50
75
100 125 150
.01
.05
.1
.5
1
5
10
50
ARF440/441
VDS = 30V
250
µ
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TC =+25
°
C
TJ =+150
°
C
V
DS
= V
GS
Operation Here
Limited By R
DS
(ON)
Crss
Coss
Ciss
TJ = +25
°
C
TJ = +125
°
C
TJ = +25
°
C
TJ = -55
°
C
TJ = +125
°
C
TJ = -55
°
C
Performance of aTypical
Push-Pull Power Amplifier (2-Devices)
f = 13.56 MHz
V
DD
= 50V
I
DQ
= 400mA - 200mA / Side
1.2
1.1
1.0
0.9
0.8
0.7
1.2
1.1
1.0
0.9
0.8
0.7
300
250
200
150
100
50
0
16
12
8
4
0
20
10
5
1
.5
.1
3,000
1,000
500
100
50
050-4406 Rev C
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Dimensions in Millimeters and (Inches)
Source
ARF44O
SOURCE
GATE
DRAIN
3.55 (.138)
3.81 (.150)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
SOURCE
DRAIN
GATE
Dimensions in Millimeters and (Inches)
Source
ARF44E
5.45 (.215) BSC
2-Plcs.
5.45 (.215) BSC
2-Plcs.
ARF440/441
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
TO-247AD Package Outline
NOTE: The ARF440 and ARF441 comprise a symmetric pair of RF power transistors and
meet the same electrical specifications. The device pin-outs are the mirror image of each
other to allow ease of use as a push-pull pair.
ARF441
ARF440
050-4406 Rev C
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388 -0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
PDF 
ZIP