APTM10HM09FT3
A
P
T
M
10H
M
09F
T
3 R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
1 6
11
Q4
14
13
23
Q2
10
8
7
3
4
22
29
31
R1
15
16
32
26
19
18
Q1
Q3
27
30
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
* Specification of MOSFET device but output current must be limited to 75A to not exceed a delta of temperature
greater than 30°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter
Max
ratings
Unit
V
DSS
Drain - Source Breakdown Voltage
100
V
T
c
= 25°C
139
I
D
Continuous
Drain
Current
T
c
= 80°C
100 *
I
DM
Pulsed Drain current
430
A
V
GS
Gate - Source Voltage
±30
V
R
DSon
Drain - Source ON Resistance
9.5
m
P
D
Maximum Power Dissipation
T
c
= 25°C
390
W
I
AR
Avalanche current (repetitive and non repetitive)
100
A
E
AR
Repetitive Avalanche Energy
50
E
AS
Single Pulse Avalanche Energy
3000
mJ
V
DSS
= 100V
R
DSon
= 9m
typ @ Tj = 25°C
I
D
= 139A @ Tc = 25°C
Application
· Welding converters
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
· Motor control
Features
· Power MOS V
®
FREDFETs
-
Low R
DSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic diode
- Avalanche energy rated
-
Very rugged
· Kelvin source for easy drive
· Very low stray inductance
-
Symmetrical design
· Internal thermistor for temperature monitoring
· High level of integration
Benefits
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Solderable terminals both for power and signal for
easy PCB mounting
· Low profile
· Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
Full - Bridge
MOSFET Power Module
APTM10HM09FT3
A
P
T
M
10H
M
09F
T
3 R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
2 6
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
GS
= 0V,V
DS
= 100V
T
j
= 25°C
100
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0V,V
DS
= 80V
T
j
= 125°C
500
µA
R
DS(on)
Drain Source on Resistance
V
GS
= 10V, I
D
= 69.5A
9
9.5
m
V
GS(th)
Gate
Threshold
Voltage
V
GS
= V
DS
, I
D
=
2.5mA
2 4 V
I
GSS
Gate Source Leakage Current
V
GS
= ±30
V, V
DS
= 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
iss
Input
Capacitance
9875
C
oss
Output
Capacitance
3940
C
rss
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 25V
f = 1MHz
1470
pF
Q
g
Total gate Charge
350
Q
gs
Gate Source Charge
60
Q
gd
Gate Drain Charge
V
GS
= 10V
V
Bus
= 50V
I
D
=139A
180
nC
T
d(on)
Turn-on
Delay
Time
35
T
r
Rise Time
70
T
d(off)
Turn-off Delay Time
95
T
f
Fall Time
Inductive switching @ 125°C
V
GS
= 15V
V
Bus
= 66V
I
D
= 139A
R
G
= 5
125
ns
E
on
Turn-on Switching Energy
552
E
off
Turn-off Switching Energy
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 66V
I
D
= 139A,
R
G
= 5
604
µJ
E
on
Turn-on Switching Energy
608
E
off
Turn-off Switching Energy
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 66V
I
D
= 139A,
R
G
= 5
641
µJ
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
Tc = 25°C
139
I
S
Continuous Source current
(Body diode)
Tc = 80°C
100
A
V
SD
Diode Forward Voltage
V
GS
= 0V, I
S
= - 139A
1.3
V
dv/dt
Peak Diode Recovery
8
V/ns
T
j
= 25°C
190
t
rr
Reverse Recovery Time
I
S
= - 139A
V
R
= 66V
di
S
/dt = 100A/µs
T
j
= 125°C
370
ns
T
j
= 25°C
0.4
Q
rr
Reverse Recovery Charge
I
S
= - 139A
V
R
= 66V
di
S
/dt = 100A/µs
T
j
= 125°C
1.7
µC
E
on
includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
I
S
- 139A di/dt 700A/µs V
R
V
DSS
T
j
150°C
APTM10HM09FT3
A
P
T
M
10H
M
09F
T
3 R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
3 6
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
R
thJC
Junction
to
Case
0.32 °C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
T
J
Operating junction temperature range
-40 150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
°C
Torque Mounting torque
To heatsink
M4
1.5
4.7
N.m
Wt Package
Weight
110 g
Temperature sensor NTC
(for more information see application note APT0406 on
www.advancedpower.com
).
Symbol Characteristic
Min Typ Max Unit
R
25
Resistance @ 25°C
50
k
B
25/85
T
25
= 298.15 K
3952
K
-
=
T
T
B
R
R
T
1
1
exp
25
85
/
25
25
Package outline
(dimensions in mm)
17
12
28
1
T: Thermistor temperature
R
T
: Thermistor value at T
APTM10HM09FT3
A
P
T
M
10H
M
09F
T
3 R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
4 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
r
m
a
l
I
m
pe
da
n
c
e
(
°
C
/
W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
6V
7V
8V
0
100
200
300
400
500
600
0
4
8
12
16
20
24
28
V
DS
, Drain to Source Voltage (V)
I
D
,
D
r
a
i
n
C
u
rre
n
t
(
A
)
Low Voltage Output Characteristics
V
GS
=15V, 10V & 9V
Transfert Characteristics
T
J
=-55°C
T
J
=25°C
T
J
=125°C
0
20
40
60
80
100
120
0
1
2
3
4
5
6
7
V
GS
, Gate to Source Voltage (V)
I
D
, Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
V
DS
> I
D
(on)xR
DS
(on)MAX
250µs pulse test @ < 0.5 duty cycle
R
DS(on)
vs Drain Current
V
GS
=10V
V
GS
=20V
0.8
0.9
1
1.1
1.2
0
25
50
75
100
I
D
, Drain Current (A)
R
DS
(
o
n
)
D
r
a
i
n
t
o
S
o
u
r
ce
O
N
R
e
si
s
t
an
c
e
Normalized to
V
GS
=10V @ 69.5A
0
20
40
60
80
100
120
140
160
25
50
75
100
125
150
T
C
, Case Temperature (°C)
I
D
, DC Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
DC Drain Current vs Case Temperature
APTM10HM09FT3
A
P
T
M
10H
M
09F
T
3 R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
5 6
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (°C)
BV
DS
S
,
D
r
a
i
n
t
o
S
o
u
r
c
e
B
r
e
a
k
dow
n
Vo
l
t
a
g
e
(
No
r
m
a
l
i
z
e
d
)
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (°C)
R
D
S
(
o
n
)
,
D
r
ai
n
t
o
S
o
u
r
ce O
N
r
esi
s
t
an
ce
(N
o
r
ma
l
i
z
e
d
)
V
GS
=10V
I
D
= 69.5A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
T
C
, Case Temperature (°C)
V
GS
(
T
H
)
,
Thr
e
s
h
ol
d
V
o
l
t
a
g
e
(
N
or
m
a
l
i
z
e
d)
Maximum Safe Operating Area
10ms
1ms
100µs
1
10
100
1000
1
10
100
V
DS
, Drain to Source Voltage (V)
I
D
, D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Single pulse
T
J
=150°C
limited by
R
DSon
Ciss
Crss
Coss
100
1000
10000
100000
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
C
,
C
a
p
aci
t
a
n
ce (
p
F
)
Capacitance vs Drain to Source Voltage
V
DS
=20V
V
DS
=50V
V
DS
=80V
0
2
4
6
8
10
12
14
16
0
100
200
300
400
500
Gate Charge (nC)
V
GS
,
G
a
t
e
t
o
S
o
u
r
ce V
o
l
t
ag
e
(
V
)
Gate Charge vs Gate to Source Voltage
I
D
=139A
T
J
=25°C
APTM10HM09FT3
A
P
T
M
10H
M
09F
T
3 R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
6 6
Delay Times vs Current
t
d(on)
t
d(off)
0
20
40
60
80
100
120
0
50
100
150
200
250
I
D
, Drain Current (A)
t
d(
o
n
)
an
d
t
d(o
ff)
(n
s
)
V
DS
=66V
R
G
=5
T
J
=125°C
L=100µH
Rise and Fall times vs Current
t
r
t
f
0
20
40
60
80
100
120
140
160
0
50
100
150
200
250
I
D
, Drain Current (A)
t
r
a
nd t
f
(n
s
)
V
DS
=66V
R
G
=5
T
J
=125°C
L=100µH
Switching Energy vs Current
E
on
E
off
0
0.5
1
1.5
0
50
100
150
200
250
I
D
, Drain Current (A)
E
on
a
nd E
of
f
(m
J
)
V
DS
=66V
R
G
=5
T
J
=125°C
L=100µH
E
on
E
off
0
0.5
1
1.5
2
2.5
0
10
20
30
40
50
60
Gate Resistance (Ohms)
Sw
i
t
c
h
i
n
g
En
e
r
g
y
(
m
J
)
Switching Energy vs Gate Resistance
V
DS
=66V
I
D
=139A
T
J
=125°C
L=100µH
Hard
switching
ZVS
ZCS
0
50
100
150
200
250
300
25
50
75
100
125
150
I
D
, Drain Current (A)
Fr
e
que
nc
y
(
k
H
z
)
Operating Frequency vs Drain Current
V
DS
=66V
D=50%
R
G
=5
T
J
=125°C
T
C
=75°C
T
J
=25°C
T
J
=150°C
1
10
100
1000
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
, Source to Drain Voltage (V)
I
DR
,
R
ever
se
D
r
ai
n
C
u
r
r
en
t
(
A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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