APTM10DHM05
A
P
T
M
10D
H
M
05
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
1 - 6
G1
S1
S4
G4
CR3
VBUS
OUT2
0/VBUS
Q4
OUT1
CR2
Q1
-
S4
G4
VBUS
0/VBUS
S1
G1
OUT1
OUT2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter
Max ratings
Unit
V
DSS
Drain - Source Breakdown Voltage
100
V
T
c
= 25°C
278
I
D
Continuous
Drain
Current
T
c
= 80°C
207
I
DM
Pulsed Drain current
1100
A
V
GS
Gate - Source Voltage
±30
V
R
DSon
Drain - Source ON Resistance
5
m
P
D
Maximum Power Dissipation
T
c
= 25°C
780
W
I
AR
Avalanche current (repetitive and non repetitive)
100
A
E
AR
Repetitive Avalanche Energy
50
E
AS
Single Pulse Avalanche Energy
3000
mJ
V
DSS
= 100V
R
DSon
= 4.5m
typ @ Tj = 25°C
I
D
= 278A @ Tc = 25°C
Application
· Welding converters
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
· Motor control
Features
· Power MOS V
®
MOSFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- M5 power connectors
· High level of integration
Benefits
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Low profile
Asymmetrical - Bridge
MOSFET Power Module
APTM10DHM05
A
P
T
M
10D
H
M
05
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
2 - 6
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
GS
= 0V,V
DS
= 100V
T
j
= 25°C
200
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0V,V
DS
= 80V
T
j
= 125°C
1000
µA
R
DS(on)
Drain Source on Resistance
V
GS
= 10V, I
D
= 125A
4.5 5 m
V
GS(th)
Gate
Threshold
Voltage
V
GS
= V
DS
, I
D
=
5mA
2 4 V
I
GSS
Gate Source Leakage Current
V
GS
= ±30
V, V
DS
= 0V
±200
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
iss
Input
Capacitance
20
C
oss
Output
Capacitance
8
C
rss
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 25V
f = 1MHz
2.9
nF
Q
g
Total gate Charge
700
Q
gs
Gate Source Charge
120
Q
gd
Gate Drain Charge
V
GS
= 10V
V
Bus
= 50V
I
D
= 250A
360
nC
T
d(on)
Turn-on
Delay
Time
80
T
r
Rise Time
165
T
d(off)
Turn-off Delay Time
280
T
f
Fall Time
Resistive Switching
V
GS
= 15V
V
Bus
= 66V
I
D
=
250A
R
G
= 2.5
135
ns
E
on
Turn-on Switching Energy
1.1
E
off
Turn-off Switching Energy
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 66V
I
D
= 250A,
R
G
=2.5
1.2
mJ
E
on
Turn-on Switching Energy
1.22
E
off
Turn-off Switching Energy
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 66V
I
D
= 250A, R
G
= 2.5
1.28
mJ
E
on
includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
Diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
200
V
T
j
= 25°C
350
I
RM
Maximum Reverse Leakage Current
V
R
=200V
T
j
= 125°C
600
µA
I
F(A V)
Maximum Average Forward Current
50% duty cycle
Tc = 80°C
200
A
I
F
= 200A
1
I
F
= 400A
1.4
V
F
Diode Forward Voltage
I
F
= 200A
T
j
= 125°C
0.9
V
T
j
= 25°C
60
t
rr
Reverse Recovery Time
T
j
= 125°C
110
ns
T
j
= 25°C
400
Q
rr
Reverse Recovery Charge
I
F
= 200A
V
R
= 133V
di/dt =600A/µs
T
j
= 125°C
1680
nC
APTM10DHM05
A
P
T
M
10D
H
M
05
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
3 - 6
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
transistor 0.16
R
thJC
Junction
to
Case
diode
0.30
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
Operating junction temperature range
-40 150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
°C
To heatsink
M6
3
5
Torque Mounting
torque
For terminals
M5
2
3.5
N.m
Wt Package
Weight
280 g
Package outline
(dimensions in mm)
APTM10DHM05
A
P
T
M
10D
H
M
05
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
4 - 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
r
m
a
l
I
m
pe
da
nc
e
(
°
C
/
W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
6V
7V
8V
0
200
400
600
800
1000
1200
0
4
8
12
16
20
24
28
V
DS
, Drain to Source Voltage (V)
I
D
,
Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
Low Voltage Output Characteristics
V
GS
=15V, 10V & 9V
Transfert Characteristics
T
J
=-55°C
T
J
=25°C
T
J
=125°C
0
40
80
120
160
200
240
0
1
2
3
4
5
6
7
V
GS
, Gate to Source Voltage (V)
I
D
,
D
r
a
i
n
C
u
r
r
e
nt
(
A
)
V
DS
> I
D
(on)xR
DS
(on)MAX
250µs pulse test @ < 0.5 duty cycle
R
DS(on)
vs Drain Current
V
GS
=10V
V
GS
=20V
0.8
0.9
1
1.1
1.2
0
25
50
75 100 125 150 175 200
I
D
, Drain Current (A)
R
DS
(
o
n
)
D
r
ai
n
t
o
S
o
u
r
ce O
N
R
e
s
i
st
an
ce
Normalized to
V
GS
=10V @ 125A
0
50
100
150
200
250
300
25
50
75
100
125
150
T
C
, Case Temperature (°C)
I
D
,
DC
D
r
a
i
n
Cu
r
r
e
n
t
(
A
)
DC Drain Current vs Case Temperature
APTM10DHM05
A
P
T
M
10D
H
M
05
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
5 - 6
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (°C)
BV
DS
S
,
D
r
a
i
n
t
o
S
o
u
r
c
e
B
r
e
a
k
dow
n
Vo
l
t
a
g
e
(
No
r
m
a
l
i
z
e
d
)
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (°C)
R
D
S
(
o
n
)
,
D
r
ai
n
t
o
S
o
u
r
ce O
N
r
esi
s
t
an
ce
(N
o
r
ma
l
i
z
e
d
)
V
GS
=10V
I
D
= 125A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
T
C
, Case Temperature (°C)
V
GS
(
T
H
)
,
Thr
e
s
h
ol
d
V
o
l
t
a
g
e
(
N
or
m
a
l
i
z
e
d)
Maximum Safe Operating Area
10ms
1ms
100µs
10
100
1000
1
10
100
V
DS
, Drain to Source Voltage (V)
I
D
, D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Single pulse
T
J
=150°C
limited by
R
DSon
Ciss
Crss
Coss
1000
10000
100000
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
C
,
C
a
p
aci
t
a
n
ce (
p
F
)
Capacitance vs Drain to Source Voltage
V
DS
=20V
V
DS
=50V
V
DS
=80V
0
2
4
6
8
10
12
14
16
0
200
400
600
800
1000
Gate Charge (nC)
V
GS
,
G
a
t
e
t
o
S
o
u
r
ce V
o
l
t
ag
e
(
V
)
Gate Charge vs Gate to Source Voltage
I
D
=250A
T
J
=25°C
APTM10DHM05
A
P
T
M
10D
H
M
05
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
6 - 6
Delay Times vs Current
t
d(on)
t
d(off)
0
50
100
150
200
250
300
350
0
100
200
300
400
I
D
, Drain Current (A)
t
d(
o
n
)
an
d
t
d(o
ff)
(n
s
)
V
DS
=66V
R
G
=2.5
T
J
=125°C
L=100µH
Rise and Fall times vs Current
t
r
t
f
0
50
100
150
200
250
0
100
200
300
400
I
D
, Drain Current (A)
t
r
a
nd t
f
(n
s
)
V
DS
=66V
R
G
=2.5
T
J
=125°C
L=100µH
Switching Energy vs Current
E
on
E
off
0
0.5
1
1.5
2
2.5
3
0
100
200
300
400
I
D
, Drain Current (A)
E
on
a
nd E
of
f
(m
J
)
V
DS
=66V
R
G
=2.5
T
J
=125°C
L=100µH
E
on
E
off
0
1
2
3
4
5
0
5
10
15
20
25
30
Gate Resistance (Ohms)
Sw
i
t
c
h
i
n
g
En
e
r
g
y
(
m
J
)
Switching Energy vs Gate Resistance
V
DS
=66V
I
D
=200A
T
J
=125°C
L=100µH
Hard
switching
ZVS
ZCS
0
20
40
60
80
100
50
100
150
200
250
I
D
, Drain Current (A)
Fr
e
que
nc
y
(
k
H
z
)
Operating Frequency vs Drain Current
V
DS
=66V
D=50%
R
G
=2.5
T
J
=125°C
T
C
=75°C
T
J
=25°C
T
J
=150°C
1
10
100
1000
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
, Source to Drain Voltage (V)
I
DR
,
R
ever
se
D
r
ai
n
C
u
r
r
en
t
(
A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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