APTM10DAM02
A
P
T
M
10D
A
M
02
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
1 - 6
G2
S2
VBUS
0/VBUS
CR1
OUT
Q2
OUT
0/VBUS
VBUS
G2
S2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter
Max ratings
Unit
V
DSS
Drain - Source Breakdown Voltage
100
V
T
c
= 25°C
495
I
D
Continuous
Drain
Current
T
c
= 80°C
370
I
DM
Pulsed Drain current
1900
A
V
GS
Gate - Source Voltage
±30
V
R
DSon
Drain - Source ON Resistance
2.5
m
P
D
Maximum Power Dissipation
T
c
= 25°C
1250
W
I
AR
Avalanche current (repetitive and non repetitive)
100
A
E
AR
Repetitive Avalanche Energy
50
E
AS
Single Pulse Avalanche Energy
3000
mJ
V
DSS
= 100V
R
DSon
= 2.25m
typ @ Tj = 25°C
I
D
= 495A @ Tc = 25°C
Application
· AC and DC motor control
· Switched Mode Power Supplies
· Power Factor Correction
Features
· Power MOS V
®
MOSFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Very low stray inductance
-
Symmetrical design
-
M5 power connectors
· High level of integration
Benefits
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Low profile
Boost chopper
MOSFET Power Module
APTM10DAM02
A
P
T
M
10D
A
M
02
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
2 - 6
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
GS
= 0V,V
DS
= 100V
T
j
= 25°C
400
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0V,V
DS
= 80V
T
j
= 125°C
2000
µA
R
DS(on)
Drain Source on Resistance
V
GS
= 10V, I
D
= 200A
2.25 2.5 m
V
GS(th)
Gate
Threshold
Voltage
V
GS
= V
DS
, I
D
=
10mA
2 4 V
I
GSS
Gate Source Leakage Current
V
GS
= ±30
V, V
DS
= 0V
±400
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
iss
Input
Capacitance
40
C
oss
Output
Capacitance
15.7
C
rss
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 25V
f = 1MHz
5.9
nF
Q
g
Total gate Charge
1360
Q
gs
Gate Source Charge
240
Q
gd
Gate Drain Charge
V
GS
= 10V
V
Bus
= 50V
I
D
= 400A
720
nC
T
d(on)
Turn-on
Delay
Time
160
T
r
Rise Time
240
T
d(off)
Turn-off Delay Time
500
T
f
Fall Time
Inductive switching
V
GS
= 15V
V
Bus
= 66V
I
D
=
400A
R
G
= 1.25
160
ns
E
on
Turn-on Switching Energy
2.2
E
off
Turn-off Switching Energy
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 66V
I
D
= 400A,
R
G
=1.25
2.41
mJ
E
on
Turn-on Switching Energy
2.43
E
off
Turn-off Switching Energy
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 66V
I
D
= 400A, R
G
= 1.25
2.56
mJ
E
on
includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
Chopper diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
200
V
T
j
= 25°C
750
I
RM
Maximum Reverse Leakage Current
V
R
=200V
T
j
= 125°C
1000
µA
I
F(A V)
Maximum Average Forward Current
50% duty cycle
Tc = 80°C
400
A
I
F
= 400A
1
I
F
= 800A
1.4
V
F
Diode Forward Voltage
I
F
= 400A
T
j
= 125°C
0.9
V
T
j
= 25°C
60
t
rr
Reverse Recovery Time
T
j
= 125°C
110
ns
T
j
= 25°C
800
Q
rr
Reverse Recovery Charge
I
F
= 400A
V
R
= 133V
di/dt =800A/µs
T
j
= 125°C
3360
nC
APTM10DAM02
A
P
T
M
10D
A
M
02
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
3 - 6
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor 0.1
R
thJC
Junction
to
Case
Diode
0.14
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I Isol<1mA, 50/60Hz
2500 V
T
J
Operating junction temperature range
-40 150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
°C
To heatsink
M6
3
5
Torque Mounting
torque
For terminals
M5
2
3.5
N.m
Wt Package
Weight
280 g
Package outline
(dimensions in mm)
APTM10DAM02
A
P
T
M
10D
A
M
02
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
4 - 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
r
m
a
l
I
m
pe
da
nc
e
(
°
C
/
W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
6V
7V
8V
0
500
1000
1500
2000
2500
0
4
8
12
16
20
24
28
V
DS
, Drain to Source Voltage (V)
I
D
,
Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
Low Voltage Output Characteristics
V
GS
=15V, 10V & 9V
Transfert Characteristics
T
J
=-55°C
T
J
=25°C
T
J
=125°C
0
80
160
240
320
400
480
0
1
2
3
4
5
6
7
V
GS
, Gate to Source Voltage (V)
I
D
,
D
r
a
i
n
C
u
r
r
e
nt
(
A
)
V
DS
> I
D
(on)xR
DS
(on)MAX
250µs pulse test @ < 0.5 duty cycle
R
DS(on)
vs Drain Current
V
GS
=10V
V
GS
=20V
0.8
0.9
1
1.1
1.2
0
100
200
300
400
500
I
D
, Drain Current (A)
R
DS
(
o
n
)
D
r
ai
n
t
o
S
o
u
r
ce O
N
R
e
s
i
st
an
ce
Normalized to
V
GS
=10V @ 200A
0
100
200
300
400
500
25
50
75
100
125
150
T
C
, Case Temperature (°C)
I
D
,
DC
D
r
a
i
n
Cu
r
r
e
n
t
(
A
)
DC Drain Current vs Case Temperature
APTM10DAM02
A
P
T
M
10D
A
M
02
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
5 - 6
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (°C)
BV
DS
S
,
D
r
a
i
n
t
o
S
o
u
r
c
e
B
r
e
a
k
dow
n
Vo
l
t
a
g
e
(
No
r
m
a
l
i
z
e
d
)
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (°C)
R
D
S
(
o
n
)
,
D
r
ai
n
t
o
S
o
u
r
ce O
N
r
esi
s
t
an
ce
(N
o
r
ma
l
i
z
e
d
)
V
GS
=10V
I
D
= 200A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
T
C
, Case Temperature (°C)
V
GS
(
T
H
)
,
Thr
e
s
h
ol
d
V
o
l
t
a
g
e
(
N
or
m
a
l
i
z
e
d)
Maximum Safe Operating Area
10ms
1ms
100µs
1
10
100
1000
10000
1
10
100
V
DS
, Drain to Source Voltage (V)
I
D
, D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Single pulse
T
J
=150°C
limited by
R
DSon
Ciss
Crss
Coss
1000
10000
100000
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
C
,
C
a
p
aci
t
a
n
ce (
p
F
)
Capacitance vs Drain to Source Voltage
V
DS
=20V
V
DS
=50V
V
DS
=80V
0
2
4
6
8
10
12
14
16
0
400
800
1200
1600
2000
Gate Charge (nC)
V
GS
,
G
a
t
e
t
o
S
o
u
r
ce V
o
l
t
ag
e
(
V
)
Gate Charge vs Gate to Source Voltage
I
D
=400A
T
J
=25°C
APTM10DAM02
A
P
T
M
10D
A
M
02
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
6 - 6
Delay Times vs Current
t
d(on)
t
d(off)
0
100
200
300
400
500
600
50
150
250
350
450
550
650
I
D
, Drain Current (A)
t
d(
o
n
)
an
d
t
d(o
ff)
(n
s
)
V
DS
=66V
R
G
=1.25
T
J
=125°C
L=100µH
Rise and Fall times vs Current
t
r
t
f
0
50
100
150
200
250
300
50
150
250
350
450
550
650
I
D
, Drain Current (A)
t
r
a
nd t
f
(n
s
)
V
DS
=66V
R
G
=1.25
T
J
=125°C
L=100µH
Switching Energy vs Current
E
on
E
off
0
1
2
3
4
5
50
150
250
350
450
550
650
I
D
, Drain Current (A)
E
on
a
nd E
of
f
(m
J
)
V
DS
=66V
R
G
=1.25
T
J
=125°C
L=100µH
E
on
E
off
1
2
3
4
5
6
7
8
9
0
2.5
5
7.5
10
12.5
15
Gate Resistance (Ohms)
Sw
i
t
c
h
i
n
g
En
e
r
g
y
(
m
J
)
Switching Energy vs Gate Resistance
V
DS
=66V
I
D
=400A
T
J
=125°C
L=100µH
Hard
switching
ZVS
ZCS
0
10
20
30
40
50
60
100
200
300
400
500
I
D
, Drain Current (A)
Fr
e
que
nc
y
(
k
H
z
)
Operating Frequency vs Drain Current
V
DS
=66V
D=50%
R
G
=1.25
T
J
=125°C
T
C
=75°C
T
J
=25°C
T
J
=150°C
1
10
100
1000
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
, Source to Drain Voltage (V)
I
DR
,
R
ever
se
D
r
ai
n
C
u
r
r
en
t
(
A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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