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Part Number APTM100UM65D-ALN

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APTM100UM65D-AlN
A
P
T
M
100U
M
65D
-
A
l
N
­
R
e
v 0 J
u
l
y, 2004
APT website ­ http://www.advancedpower.com
1 ­ 6










D
S
G
SK


Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter
Max ratings
Unit
V
DSS
Drain - Source Breakdown Voltage
1000
V
T
c
= 25°C
145
I
D
Continuous
Drain
Current
T
c
= 80°C
110
I
DM
Pulsed Drain current
580
A
V
GS
Gate - Source Voltage
±30
V
R
DSon
Drain - Source ON Resistance
65
m
P
D
Maximum Power Dissipation
T
c
= 25°C
3250
W
I
AR
Avalanche current (repetitive and non repetitive)
30
A
E
AR
Repetitive Avalanche Energy
50
E
AS
Single Pulse Avalanche Energy
3200
mJ
V
DSS
= 1000V
R
DSon
= 65m max @ Tj = 25°C
I
D
= 145A @ Tc = 25°C
Application
· Zero Current Switching resonant mode

Features
· Power MOS 7
®
MOSFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- M5 power connectors
· High level of integration
· AlN substrate for improved thermal performance
Benefits
· Outstanding performance at high frequency
operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Low profile
Single switch
with Series diode
MOSFET Power Module
APTM100UM65D-AlN
A
P
T
M
100U
M
65D
-
A
l
N
­
R
e
v 0 J
u
l
y, 2004
APT website ­ http://www.advancedpower.com
2 ­ 6
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
DSS
Drain - Source Breakdown Voltage
V
GS
= 0V, I
D
= 1mA
1000
V
V
GS
= 0V,V
DS
= 1000V
T
j
= 25°C
400
µA
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0V,V
DS
= 800V
T
j
= 125°C
2
mA
R
DS(on)
Drain ­ Source on Resistance
V
GS
= 10V, I
D
= 75A
65
m
V
GS(th)
Gate
Threshold
Voltage
V
GS
= V
DS
, I
D
=
20mA
3 5 V
I
GSS
Gate ­ Source Leakage Current
V
GS
= ±30 V, V
DS
= 0V
±400
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
iss
Input
Capacitance
28.5
C
oss
Output
Capacitance
5.08
C
rss
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 25V
f = 1MHz
0.9
nF
Q
g
Total gate Charge
1068
Q
gs
Gate ­ Source Charge
136
Q
gd
Gate ­ Drain Charge
V
GS
= 10V
V
Bus
= 500V
I
D
= 145A
692
nC
T
d(on)
Turn-on
Delay
Time
18
T
r
Rise Time
14
T
d(off)
Turn-off Delay Time
140
T
f
Fall Time
V
GS
= 15V
V
Bus
= 500V
I
D
= 145A
R
G
= 0.75
55
ns
E
on
Turn-on Switching Energy
4.8
E
off
Turn-off Switching Energy
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 670V
I
D
= 145A,
R
G
= 0.75
2.9
mJ
E
on
Turn-on Switching Energy
8
E
off
Turn-off Switching Energy
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 670V
I
D
= 145A,
R
G
= 0.75
3.9
mJ
E
on
includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.

Series diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
RRM
Maximum Repetitive Reverse Voltage
1000 V
I
RM
Maximum Reverse Leakage Current
V
R
=1000V
T
j
= 125°C
2
mA
I
F(A V)
Maximum Average Forward Current 50% duty cycle
T
c
= 100°C
240 A
I
F
= 240A
1.9
2.5
I
F
= 480A
2.2
V
F
Diode Forward Voltage
I
F
= 240A
T
j
= 125°C
1.7
V
T
j
= 25°C
280
t
rr
Reverse Recovery Time
I
F
= 240A
V
R
= 667V
di/dt = 800A/µs
T
j
= 125°C
350
ns
T
j
= 25°C
3
Q
rr
Reverse Recovery Charge
I
F
= 240A
V
R
= 667V
di/dt = 800A/µs
T
j
= 125°C
14.4
µC
APTM100UM65D-AlN
A
P
T
M
100U
M
65D
-
A
l
N
­
R
e
v 0 J
u
l
y, 2004
APT website ­ http://www.advancedpower.com
3 ­ 6
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor
0.038
R
thJC
Junction
to
Case
Series diode
0.23
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
2500
V
T
J
Operating junction temperature range
-40 150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
°C
To Heatsink
M6
3
5
Torque Mounting
torque
For teminals
M5
2
3.5
N.m
Wt Package
Weight
280 g
Package outline

APTM100UM65D-AlN
A
P
T
M
100U
M
65D
-
A
l
N
­
R
e
v 0 J
u
l
y, 2004
APT website ­ http://www.advancedpower.com
4 ­ 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
r
m
a
l
I
m
pe
da
nc
e
(
°
C
/
W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5V
5.5V
6V
6.5V
7V
0
40
80
120
160
200
240
280
320
360
0
5
10
15
20
25
30
V
DS
, Drain to Source Voltage (V)
I
D
,
Dr
a
i
n

Cu
r
r
e
n
t

(
A
)
V
GS
=15, 10V
Low Voltage Output Characteristics
Transfert Characteristics
T
J
=-55°C
T
J
=25°C
T
J
=125°C
0
80
160
240
320
400
480
0
1
2
3
4
5
6
7
8
V
GS
, Gate to Source Voltage (V)
I
D
,
Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
V
DS
> I
D
(on)xR
DS
(on)MAX
250µs pulse test @ < 0.5 duty cycle
R
DS(on)
vs Drain Current
V
GS
=10V
V
GS
=20V
0.8
0.9
1
1.1
1.2
1.3
1.4
0
80
160
240
320
I
D
, Drain Current (A)
R
DS
(
o
n
)
D
r
ai
n

t
o
S
o
u
r
ce O
N
R
e
si
st
an
ce
Normalized to
V
GS
=10V @ 72.5A
0
40
80
120
160
25
50
75
100
125
150
T
C
, Case Temperature (°C)
I
D
,
DC

D
r
a
i
n
Cu
r
r
e
n
t

(
A
)
DC Drain Current vs Case Temperature
APTM100UM65D-AlN
A
P
T
M
100U
M
65D
-
A
l
N
­
R
e
v 0 J
u
l
y, 2004
APT website ­ http://www.advancedpower.com
5 ­ 6
0.85
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (°C)
BV
DS
S
,
D
r
ai
n

t
o
S
o
u
r
ce
B
r
eak
d
o
w
n
V
o
l
t
ag
e (
N
o
r
m
a
l
i
z
e
d
)
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (°C)
R
DS
(
o
n
)
,

D
r
a
i
n
t
o
S
o
u
r
ce O
N

r
esi
st
an
ce
(
N
or
m
a
l
i
z
e
d)
V
GS
=10V
I
D
=72.5A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
T
C
, Case Temperature (°C)
V
GS
(
T
H
)
,
Th
r
e
s
hol
d
V
o
l
t
a
g
e
(N
o
r
ma
l
i
z
e
d
)
Maximum Safe Operating Area
10ms
1ms
100µs
1
10
100
1000
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
I
D
,
Dr
a
i
n

Cu
r
r
e
n
t
(
A
)
limited by R
DS
on
Single pulse
T
J
=150°C
Ciss
Crss
Coss
100
1000
10000
100000
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
C
,
C
a
p
aci
t
a
n
ce (
p
F
)
Capacitance vs Drain to Source Voltage
V
DS
=200V
V
DS
=500V
V
DS
=800V
0
2
4
6
8
10
12
14
0
300
600
900
1200
1500
Gate Charge (nC)
V
GS
,
G
a
t
e

t
o
S
o
u
r
ce V
o
l
t
ag
e
(
V
)
Gate Charge vs Gate to Source Voltage
I
D
=145A
T
J
=25°C
APTM100UM65D-AlN
A
P
T
M
100U
M
65D
-
A
l
N
­
R
e
v 0 J
u
l
y, 2004
APT website ­ http://www.advancedpower.com
6 ­ 6
Delay Times vs Current
t
d(on)
t
d(off)
0
40
80
120
160
50
94
138
182
226
270
I
D
, Drain Current (A)
t
d(o
n
)
a
nd t
d(
off
)
(n
s
)
V
DS
=670V
R
G
=0.75
T
J
=125°C
L=100µH
Rise and Fall times vs Current
t
r
t
f
0
20
40
60
80
100
50
94
138
182
226
270
I
D
, Drain Current (A)
t
r
an
d
t
f
(n
s
)
V
DS
=670V
R
G
=0.75
T
J
=125°C
L=100µH
Switching Energy vs Current
E
on
E
off
0
2
4
6
8
10
12
14
16
50
94
138
182
226
270
I
D
, Drain Current (A)
S
w
i
t
ch
i
n
g
E
n
er
g
y

(
m
J)
V
DS
=670V
R
G
=0.75
T
J
=125°C
L=100µH
E
on
E
off
2
6
10
14
18
22
26
0
1
2
3
4
5
6
7
8
Gate Resistance (Ohms)
S
w
it
c
h
in
g
E
n
e
r
g
y
(
m
J
)
Switching Energy vs Gate Resistance
V
DS
=670V
I
D
=145A
T
J
=125°C
L=100µH
Hard
switching
ZCS
0
50
100
150
200
250
300
15
35
55
75
95
115
135
I
D
, Drain Current (A)
F
r
eq
u
e
n
cy (
k
H
z
)
Operating Frequency vs Drain Current
V
DS
=670V
D=50%
R
G
=0.75
T
J
=125°C
T
C
=75°C
T
J
=25°C
T
J
=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
V
SD
, Source to Drain Voltage (V)
I
DR
,
R
ever
se D
r
ai
n

C
u
r
r
e
n
t
(
A
)
Source to Drain Diode Forward Voltage


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