APTM100A13D
A
P
T
M
100A
13D
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
1 - 6
OUT
VBUS
S1
G1
0/VBUS
G2
S2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter
Max ratings
Unit
V
DSS
Drain - Source Breakdown Voltage
1000
V
T
c
= 25°C
65
I
D
Continuous
Drain
Current
T
c
= 80°C
49
I
DM
Pulsed Drain current
240
A
V
GS
Gate - Source Voltage
±30
V
R
DSon
Drain - Source ON Resistance
130
m
P
D
Maximum Power Dissipation
T
c
= 25°C
1250
W
I
AR
Avalanche current (repetitive and non repetitive)
24
A
E
AR
Repetitive Avalanche Energy
30
E
AS
Single Pulse Avalanche Energy
1300
mJ
V
DSS
= 1000V
R
DSon
= 130m
max @ Tj = 25°C
I
D
= 65A @ Tc = 25°C
Application
· Zero Current Switching resonant mode
Features
· Power MOS 7
®
MOSFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- M5 power connectors
· High level of integration
Benefits
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Low profile
Phase leg
with Series diodes
MOSFET Power Module
APTM100A13D
A
P
T
M
100A
13D
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
2 - 6
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
DSS
Drain - Source Breakdown Voltage
V
GS
= 0V, I
D
= 1.5mA
1000
V
V
GS
= 0V,V
DS
= 1000V
T
j
= 25°C
600
µA
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0V,V
DS
= 800V
T
j
= 125°C
2
mA
R
DS(on)
Drain Source on Resistance
V
GS
= 10V, I
D
= 32.5A
130
m
V
GS(th)
Gate
Threshold
Voltage
V
GS
= V
DS
, I
D
=
6mA
3 5 V
I
GSS
Gate Source Leakage Current
V
GS
= ±30 V, V
DS
= 0V
±450
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
iss
Input
Capacitance
15.2
C
oss
Output
Capacitance
2.6
C
rss
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 25V
f = 1MHz
0.44
nF
Q
g
Total gate Charge
562
Q
gs
Gate Source Charge
75
Q
gd
Gate Drain Charge
V
GS
= 10V
V
Bus
= 500V
I
D
= 65A
363
nC
T
d(on)
Turn-on
Delay
Time
9
T
r
Rise Time
9
T
d(off)
Turn-off Delay Time
50
T
f
Fall Time
Inductive switching @ 125°C
V
GS
= 15V
V
Bus
=667V
I
D
= 65A
R
G
= 0.5
24
ns
E
on
Turn-on Switching Energy
2.13
E
off
Turn-off Switching Energy
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 667V
I
D
= 65A,
R
G
= 0.5
0.46
mJ
E
on
Turn-on Switching Energy
4.5
E
off
Turn-off Switching Energy
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 667V
I
D
= 65A,
R
G
= 0.5
0.57
mJ
E
on
includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
RRM
Maximum Repetitive Reverse Voltage
1000 V
I
RM
Maximum Reverse Leakage Current
V
R
=1000V
T
j
= 125°C
1
mA
I
F(A V)
Maximum Average Forward Current 50% duty cycle
T
c
= 100 °C
120 A
I
F
= 120A
1.9
2.5
I
F
= 240A
2.2
V
F
Diode Forward Voltage
I
F
= 120A
T
j
= 125°C
1.7
V
T
j
= 25°C
280
t
rr
Reverse Recovery Time
I
F
= 120A
V
R
= 670V
di/dt = 400A/µs
T
j
= 125°C
350
ns
T
j
= 25°C
1.5
Q
rr
Reverse Recovery Charge
I
F
= 120A
V
R
= 670V
di/dt = 400A/µs
T
j
= 125°C
7.2
µC
APTM100A13D
A
P
T
M
100A
13D
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
3 - 6
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor
0.10
R
thJC
Junction
to
Case
Series diode
0.46
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
T
J
Operating junction temperature range
-40 150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
°C
To heatsink
M6
3
5
Torque Mounting
torque
For terminals
M5
2
3.5
N.m
Wt Package
Weight
280 g
Package outline
APTM100A13D
A
P
T
M
100A
13D
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
4 - 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
r
m
a
l
I
m
pe
da
nc
e
(
°
C
/
W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5V
5.5V
6V
6.5V
7V
0
30
60
90
120
150
180
0
4
8
12
16
20
24
28
V
DS
, Drain to Source Voltage (V)
I
D
,
Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
V
GS
=15&10V
Low Voltage Output Characteristics
Transfert Characteristics
T
J
=-55°C
T
J
=25°C
T
J
=125°C
0
60
120
180
240
300
360
0
1
2
3
4
5
6
7
8
9 10
V
GS
, Gate to Source Voltage (V)
I
D
,
Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
V
DS
> I
D
(on)xR
DS
(on)MAX
250µs pulse test @ < 0.5 duty cycle
R
DS(on)
vs Drain Current
V
GS
=10V
V
GS
=20V
0.8
0.9
1
1.1
1.2
1.3
1.4
0
30
60
90
120
150
180
I
D
, Drain Current (A)
R
DS
(
o
n
)
D
r
ai
n
t
o
S
o
u
r
ce O
N
R
e
si
st
an
ce
Normalized to
V
GS
=10V @ 32.5A
0
10
20
30
40
50
60
70
25
50
75
100
125
150
T
C
, Case Temperature (°C)
I
D
,
DC
D
r
a
i
n
Cu
r
r
e
n
t
(
A
)
DC Drain Current vs Case Temperature
APTM100A13D
A
P
T
M
100A
13D
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
5 - 6
0.85
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (°C)
BV
DS
S
,
D
r
ai
n
t
o
S
o
u
r
ce
B
r
eak
d
o
w
n
V
o
l
t
ag
e (
N
o
r
m
a
l
i
z
e
d
)
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (°C)
R
DS
(
o
n
)
,
D
r
a
i
n
t
o
S
o
u
r
ce O
N
r
esi
st
an
ce
(
N
or
m
a
l
i
z
e
d)
V
GS
=10V
I
D
=32.5A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
T
C
, Case Temperature (°C)
V
GS
(
T
H
)
,
Th
r
e
s
hol
d
V
o
l
t
a
g
e
(N
o
r
ma
l
i
z
e
d
)
Maximum Safe Operating Area
100ms
10ms
1ms
100µs
1
10
100
1000
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
I
D
,
Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
limited by R
DS
on
Single pulse
T
J
=150°C
Ciss
Crss
Coss
100
1000
10000
100000
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
C
,
C
a
p
aci
t
a
n
ce (
p
F
)
Capacitance vs Drain to Source Voltage
V
DS
=200V
V
DS
=500V
V
DS
=800V
0
2
4
6
8
10
12
14
0
120 240 360 480 600 720 840
Gate Charge (nC)
V
GS
,
G
a
t
e
t
o
S
o
u
r
ce V
o
l
t
ag
e
(
V
)
Gate Charge vs Gate to Source Voltage
I
D
=65A
T
J
=25°C
APTM100A13D
A
P
T
M
100A
13D
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
6 - 6
Delay Times vs Current
t
d(on)
t
d(off)
0
10
20
30
40
50
60
20
30
40
50
60
70
80
90 100
I
D
, Drain Current (A)
t
d(o
n
)
a
nd t
d(
off
)
(n
s
)
V
DS
=667V
R
G
=0.5
T
J
=125°C
L=100µH
Rise and Fall times vs Current
t
r
t
f
0
10
20
30
40
50
20
30
40
50
60
70
80
90 100
I
D
, Drain Current (A)
t
r
an
d
t
f
(n
s
)
V
DS
=667V
R
G
=0.5
T
J
=125°C
L=100µH
Switching Energy vs Current
E
on
E
off
0
1
2
3
4
5
6
7
8
20 30 40 50 60 70 80 90 100
I
D
, Drain Current (A)
S
w
i
t
ch
i
n
g
E
n
er
g
y
(
m
J)
V
DS
=667V
R
G
=0.5
T
J
=125°C
L=100µH
E
on
E
off
0
1
2
3
4
5
6
0
1
2
3
4
5
Gate Resistance (Ohms)
S
w
i
t
ch
i
n
g
E
n
er
g
y
(
m
J)
Switching Energy vs Gate Resistance
V
DS
=667V
I
D
=65A
T
J
=125°C
L=100µH
Hard
switching
ZCS
0
50
100
150
200
250
300
10
20
30
40
50
60
I
D
, Drain Current (A)
F
r
eq
u
e
n
cy (
k
H
z
)
Operating Frequency vs Drain Current
V
DS
=667V
D=50%
R
G
=0.5
T
J
=125°C
T
C
=75°C
T
J
=25°C
T
J
=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
V
SD
, Source to Drain Voltage (V)
I
DR
,
R
ever
se D
r
ai
n
C
u
r
r
e
n
t
(
A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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