APT5010JLLU2
A
P
T
5
010J
L
L
U
2 R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
1 7
ISOTOP
Ò
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
G
S
D
K
Symbol Parameter
Max
ratings
Unit
V
DSS
Drain - Source Breakdown Voltage
500
V
T
c
= 25°C
41
I
D
Continuous Drain Current
T
c
= 80°C
30
I
DM
Pulsed Drain current
164
A
V
GS
Gate - Source Voltage
±30
V
R
DSon
Drain - Source ON Resistance
100
m
W
P
D
Maximum Power Dissipation
T
c
= 25°C
378
W
I
AR
Avalanche current (repetitive and non repetitive)
41
A
E
AR
Repetitive Avalanche Energy
50
E
AS
Single Pulse Avalanche Energy
1600
mJ
IF
AV
Maximum Average Forward Current
Duty cycle=0.5
Tc = 80°C
30
IF
RMS
RMS Forward Current (Square wave, 50% duty)
39
A
V
DSS
= 500V
R
DSon
= 100m
W max @ Tj = 25°C
I
D
= 41A @ Tc = 25°C
Application
· AC and DC motor control
· Switched Mode Power Supplies
· Power Factor Correction
· Brake switch
Features
· Power MOS 7
®
MOSFETs
- Low
R
DSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very
rugged
· ISOTOP
®
Package (SOT-227)
· Very low stray inductance
· High level of integration
Benefits
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Very rugged
· Low profile
ISOTOP
®
Boost chopper
MOSFET Power Module
K
D
G
S
APT5010JLLU2
A
P
T
5
010J
L
L
U
2 R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
2 7
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
DSS
Drain - Source Breakdown Voltage V
GS
= 0V, I
D
= 250µA
500
V
V
GS
= 0V,V
DS
= 500V
T
j
= 25°C
100
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0V,V
DS
= 400V
T
j
= 125°C
500
µA
R
DS(on)
Drain Source on Resistance
V
GS
= 10V, I
D
= 23A
100
m
W
V
GS(th)
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= 2.5mA
3
5
V
I
GSS
Gate Source Leakage Current
V
GS
= ±20
V, V
DS
= 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
iss
Input
Capacitance
4360
C
oss
Output
Capacitance
894
C
rss
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 25V
f = 1MHz
60
pF
Q
g
Total gate Charge
96
Q
gs
Gate Source Charge
24
Q
gd
Gate Drain Charge
V
GS
= 10V
V
Bus
= 250V
I
D
= 41A @ T
J
=25°C
49
nC
T
d(on)
Turn-on Delay Time
11
T
r
Rise Time
15
T
d(off)
Turn-off Delay Time
25
T
f
Fall Time
Resistive switching @ 25°C
V
GS
= 15V
V
Bus
= 250V
I
D
= 41A @ T
J
=25°C
R
G
= 0.6
W
3
ns
E
on
Turn-on Switching Energy
u
543
E
off
Turn-off Switching Energy
Inductive Switching @ 25°C
V
bus
= 330V, V
GS
=15V
I
D
=46A, R
G
=5
509
µJ
E
on
Turn-on Switching Energy
u
843
E
off
Turn-off Switching Energy
Inductive Switching @ 125°C
V
bus
= 330V, V
GS
=15V
I
D
=46A, R
G
=5
593
µJ
u Eon includes diode reverse recovery
Diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
I
F
= 30A
1.6
1.8
I
F
= 60A
1.9
V
F
Diode Forward Voltage
I
F
= 30A
T
j
= 125°C
1.4
V
V
R
= 600V
T
j
= 25°C
250
I
RM
Maximum Reverse Leakage Current
V
R
= 600V
T
j
= 125°C
500
µA
C
T
Junction
Capacitance
V
R
=
200V
44 pF
Reverse Recovery Time
I
F
=1A,V
R
=30V
di/dt =100A/µs
T
j
= 25°C
23
T
j
= 25°C
85
t
rr
Reverse Recovery Time
T
j
= 125°C
160
ns
T
j
= 25°C
4
I
RRM
Maximum Reverse Recovery Current
T
j
= 125°C
8
A
T
j
= 25°C
130
Q
rr
Reverse Recovery Charge
I
F
= 30A
V
R
= 400V
di/dt =200A/µs
T
j
= 125°C
700
nC
t
rr
Reverse Recovery Time
70
ns
Q
rr
Reverse Recovery Charge
1300
nC
I
RRM
Maximum Reverse Recovery Current
I
F
= 30A
V
R
= 400V
di/dt =1000A/µs
T
j
= 125°C
30 A
APT5010JLLU2
A
P
T
5
010J
L
L
U
2 R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
3 7
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
MOSFET
0.33
R
thJC
Junction
to
Case
Diode
1.21
R
thJA
Junction to Ambient (IGBT & Diode)
20
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
,T
STG
Storage
Temperature
Range
-55
150
T
L
Max Lead Temp for Soldering:0.063" from case for 10 sec
300
°C
Torque Mounting
torque
(Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
1.5
N.m
Wt Package
Weight
29.2 g
Typical
MOSFET Performance Curve
APT5010JLLU2
A
P
T
5
010J
L
L
U
2 R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
4 7
APT5010JLLU2
A
P
T
5
010J
L
L
U
2 R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
5 7
Typical Diode Performance Curve
APT5010JLLU2
A
P
T
5
010J
L
L
U
2 R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
6 7
APT5010JLLU2
A
P
T
5
010J
L
L
U
2 R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
7 7
SOT-227 (ISOTOP
®
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
ISOTOP
®
is a Registered Trademark of SGS Thomson
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
Source
Gate
Drain
Cathode
PDF 
ZIP