APT40N60JCU3

P
T

4
0N

60J

3 R

e
v 0 A

p
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2004

APT website http://www.advancedpower.com

1 - 8

ISOTOP

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

Symbol Parameter

Max

ratings

Unit

DSS

Drain - Source Breakdown Voltage

600

= 25°C

Continuous Drain Current

= 80°C

Pulsed Drain current

120

Gate - Source Voltage

±20

DSon

Drain - Source ON Resistance

Maximum Power Dissipation

= 25°C

290

Avalanche current (repetitive and non repetitive)

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

1800

Maximum Average Forward Current

Duty cycle=0.5

Tc = 80°C

RMS

RMS Forward Current (Square wave, 50% duty)

DSS

= 600V

DSon

= 70m

W max @ Tj = 25°C

= 40A @ Tc = 25°C

Application

· AC and DC motor control

· Switched Mode Power Supplies

Features

Ultra low R

DSon

Low Miller capacitance

Ultra low gate charge

Avalanche energy rated

· ISOTOP

Package (SOT-227)

· Very low stray inductance

· High level of integration

Benefits

· Outstanding performance at high frequency operation

· Stable temperature behavior

· Very rugged

· Direct mounting to heatsink (isolated package)

· Low junction to case thermal resistance

· Easy paralleling due to positive TC of VCEsat

ISOTOP

Buck chopper

Super Junction

MOSFET Power Module

APT40N60JCU3

P
T

4
0N

60J

3 R

e
v 0 A

p
r
i
l
,
2004

APT website http://www.advancedpower.com

2 - 8

All ratings @ T

= 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

Test

Conditions

Min Typ Max Unit

DSS

Drain - Source Breakdown Voltage V

= 0V, I

= 250µA

600

= 0V,V

= 600V

= 25°C

DSS

Zero Gate Voltage Drain Current

= 0V,V

= 600V

= 125°C

250

µA

DS(on)

Drain Source on Resistance

= 10V, I

= 20A

GS(th)

Gate Threshold Voltage

= V

, I

= 1mA

2.1

3.9

GSS

Gate Source Leakage Current

= ±20

V, V

= 0V

±100

Dynamic Characteristics

Symbol Characteristic

Test

Conditions

Min Typ Max Unit

iss

Input

Capacitance

7015

oss

Output

Capacitance

2565

rss

Reverse Transfer Capacitance

= 0V

= 25V

f = 1MHz

212

Total gate Charge

259

Gate Source Charge

Gate Drain Charge

= 10V

Bus

= 300V

= 40A

111

d(on)

Turn-on Delay Time

Rise Time

d(off)

Turn-off Delay Time

115

Fall Time

Resistive Switching
V

= 15V

Bus

= 380V

= 40A

= 1.8

Eon

Turn-on Switching Energy

670

Eoff

Turn-off Switching Energy

Inductive switching @ 25°C
V

= 15V, V

Bus

= 400V

= 40A,

= 5

980

µJ

Eon

Turn-on Switching Energy

1100

Eoff

Turn-off Switching Energy

Inductive switching @ 125°C
V

= 15V, V

Bus

= 400V

= 40A,

= 5

1206

µJ

u Eon includes diode reverse recovery

v In accordance with JEDEC standard JESD24-1.

APT40N60JCU3

P
T

4
0N

60J

3 R

e
v 0 A

p
r
i
l
,
2004

APT website http://www.advancedpower.com

3 - 8

Diode ratings and characteristics

Symbol Characteristic

Test

Conditions

Min Typ Max Unit

= 30A

1.6

1.8

= 60A

1.9

Diode Forward Voltage

= 30A

= 125°C

1.4

= 600V

= 25°C

250

Maximum Reverse Leakage Current

= 600V

= 125°C

500

µA

Junction

Capacitance

200V

44 pF

Reverse Recovery Time

=1A,V

=30V

di/dt =100A/µs

= 25°C

Reverse Recovery Time

= 125°C

160

= 25°C

RRM

Maximum Reverse Recovery Current

= 125°C

= 25°C

130

Reverse Recovery Charge

= 30A

= 400V

di/dt =200A/µs

= 125°C

700

Reverse Recovery Time

Reverse Recovery Charge

1300

RRM

Maximum Reverse Recovery Current

= 30A

= 400V

di/dt =1000A/µs

= 125°C

30 A

Thermal and package characteristics

Symbol Characteristic

Min Typ Max Unit

CoolMos 0.43

thJC

Junction

Case

Diode

1.21

thJA

Junction to Ambient (IGBT & Diode)

°C/W

ISOL

RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz

2500 V

STG

Storage

Temperature

Range

-55

150

Max Lead Temp for Soldering:0.063" from case for 10 sec

300

°C

Torque Mounting

torque

(Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)

1.5

N.m

Wt Package

Weight

29.2 g

Typical CoolMOS Performance Curve

Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0.45

0.5

0.00001

0.0001

0.001

0.01

0.1

Rectangular Pulse Duration (Seconds)

The

r
m

a
l
I
m

e
da

c
e

(
°
C

/
W

)

Fig 1, Maximum Effective transient thermal Impedance, Junction to case vs Pulse Duration

APT40N60JCU3

P
T

4
0N

60J

3 R

e
v 0 A

p
r
i
l
,
2004

APT website http://www.advancedpower.com

8 - 8

SOT-227 (ISOTOP

) Package Outline

31.5 (1.240)

31.7 (1.248)

Dimensions in Millimeters and (Inches)

7.8 (.307)

8.2 (.322)

30.1 (1.185)

30.3 (1.193)
38.0 (1.496)

38.2 (1.504)

14.9 (.587)

15.1 (.594)

11.8 (.463)

12.2 (.480)
8.9 (.350)

9.6 (.378)

Hex Nut M4

(4 places)

0.75 (.030)

0.85 (.033)

12.6 (.496)

12.8 (.504)

25.2 (0.992)

25.4 (1.000)

1.95 (.077)

2.14 (.084)

r = 4.0 (.157)

(2 places)

4.0 (.157)

4.2 (.165)

(2 places)

W=4.1 (.161)

W=4.3 (.169)

H=4.8 (.187)

H=4.9 (.193)

(4 places)

3.3 (.129)

3.6 (.143)

Emitter terminals are shorted

internally. Current handling

capability is equal for either

Emitter terminal.

ISOTOP

is a Registered Trademark of SGS Thomson

APT reserves the right to change, without notice, the specifications and information contained herein

APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.

Source

Gate

Drain

Anode

Part Number APT40N60JCU3