2729-170R2
APT-RF RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK
OUR WEB SITE AT
WWW.ADVANCEDPOWER.COM
OR CONTACT OUR FACTORY DIRECTLY.
2729-170
170 Watts, 38 Volts, 100µs, 10%
Radar 2700-2900 MHz
GENERAL DESCRIPTION
The 2729-170 is an internally matched, COMMON BASE bipolar transistor
capable of providing 170 Watts of pulsed RF output power at 100µs pulse
width, 10% duty factor across the 2700 to 2900 MHz band. The transistor
prematch and test fixture has been optimized through the use of Pulsed
Automated Load Pull. This hermetically solder-sealed transistor is specifically
designed for S-band radar applications. It utilizes gold metallization and emitter
ballasting to provide high reliability and supreme ruggedness.
CASE OUTLINE
55KS-1
Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25
°
C
1
570 W
Maximum Voltage and Current
Collector to Base Voltage (BV
ces
)
65 V
Emitter to Base Voltage (BV
ebo
)
3.0 V
Collector Current (I
c
)
17 A
Maximum Temperatures
Storage Temperature
-65 to +200
°
C
Operating Junction Temperature
+200
°
C
ELECTRICAL CHARACTERISTICS @ 25
°
C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
MIN TYP MAX UNITS
P
out
Power Output
F=2700-2900 MHz
170
W
P
in
Power Input
V
cc
= 38 Volts
25.7
W
P
g
Power Gain
Pulse Width = 100 µs
8.2
8.6
dB
c
Collector Efficiency
Duty Factor = 10%
52
60
%
VSWR
Load Mismatch Tolerance
1
F = 2900 MHz, P
o
= 170 W
2:1
FUNCTIONAL CHARACTERISTICS @ 25
°
C
BV
ebo
Emitter to Base Breakdown
Ie = 30 mA
3.0
V
Iebo
Emitter to Base Leakage
Veb = 1.5 V
2
mA
BV
ces
Collector to Emitter Breakdown Ic = 120 mA
56
65
V
Ices
Collector to Emitter Leakage
Vce = 36 V
7
mA
h
FE
DC Current Gain
Vce = 5V, Ic = 600 mA
18
50
jc
1
Thermal Resistance
0.30
°
C/W
NOTE:
1. At rated output power and pulse conditions
Issue April 2005
2729-170R2
APT-RF RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK
OUR WEB SITE AT
WWW.ADVANCEDPOWER.COM
OR CONTACT OUR FACTORY DIRECTLY.
2729-170
Vcc = 38 Volts, Pulse Width = 100
µ
s, Duty = 10 %
G2754-2,
Product is in characterization, additional curves will be inserted at the conclusion.
Input and Load Impedance
Input Impedance vs Frequency
-5
0
5
10
15
2.7
2.75
2.8
2.85
2.9
Frequency - GHz
Zin = Rin + jXin
Rin
jXin
Load Impedance vs Frequency
-6
-4
-2
0
2
4
2.7
2.75
2.8
2.85
2.9
Frequency - GHz
Zload = Rl + jXl
Rl
jXl
Note: Zin is looking into the transistor input, Zl is looking into the Output Circuit.
Pout vs. Pin
0.0
20.0
40.0
60.0
80.0
100.0
120.0
140.0
160.0
180.0
200.0
0.0
10.0
20.0
30.0
Pin (W)
Pout (W)
2.7GHz
2.8GHz
2.9GHz
Efficiency vs Power Out
0.0
10.0
20.0
30.0
40.0
50.0
60.0
70.0
0.0
50.0
100.0
150.0
200.0
Power Output (W)
Efficiency (%)
2.7GHz
2.8GHz
2.9GHz
Power Gain vs Power Out
0
1
2
3
4
5
6
7
8
9
0.0
50.0
100.0
150.0
200.0
Pout (W)
Gain (dB)
2.7GHz
2.8GHz
2.9GHz
2729-170R2
APT-RF RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK
OUR WEB SITE AT
WWW.ADVANCEDPOWER.COM
OR CONTACT OUR FACTORY DIRECTLY.
2729-170
Broadband Test Circuit
2729-170R2
APT-RF RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK
OUR WEB SITE AT
WWW.ADVANCEDPOWER.COM
OR CONTACT OUR FACTORY DIRECTLY.
2729-170
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