Advanced Monolithic Systems, Inc. 6680B Sierra Lane, Dublin, CA 94568 Phone (925) 556-9090 Fax (925) 556-9140
Advanced
AMS264
Monolithic
PNP SILICON HIGH FREQUENCY TRANSISTOR
Systems
FEATURES
APPLICATIONS
·
·
High Collector-Emitter Breakdown 120V Min.
·
·
High density Television
·
·
High Frequency of 1.2GHz at 50mA
·
·
Computer Monitors
·
·
Available in TO-220 Package
GENERAL DESCRIPTION
The AMS264 is an RF type small signal bipolar transistor designed for use in high performance applications such as
advanced color CRT monitor drivers that require both high frequency and high voltage. The use of fully ion implanted
technology and silicon nitride passivation makes the AMS264 a highly reliable device. For a complimentary NPN transistor
in applications where the matching characteristics are important use AMS232.
ORDERING INFORMATION:
PACKAGE TYPE
TO-220
OPERATING JUNCTION
TEMP. RANGE
AMS264
-40
°
C to +150
°
C
PIN CONNECTIONS
1- Emitter
2- Collector
3- Base
ABSOLUTE MAXIMUM RATINGS
(Note 1)
Collector - Emitter Voltage
125V
Operating Junction Temperature
150
°
C
Collector - Base Voltage
130V
Storage Temperature
-40
°
C to +150
°
C
Emitter - Base Voltage
3.5V
Power Dissipation
@
T
C
=75
°
C
5 W
Collector Current
250mA
Thermal Resistance, Junction to Case
25
°
C/W
Note1:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. For guaranteed specifications and test conditions, see the
Electrical Characteristics
.
The guaranteed specifications apply only for the test conditions listed.
1
2
3
FRONT VIEW
Advanced Monolithic Systems, Inc. 6680B Sierra Lane, Dublin, CA 94568 Phone (925) 556-9090 Fax (925) 556-9140
AMS264
ELECTRICAL CHARACTERISTICS
Electrical Characteristics at T
C
= 25
°
C, unless otherwise specified
AMS264
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Off Characteristics
Collector - Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA, I
B
= 0
120
V
Collector - Base Breakdown Voltage
V
(BR)CBO
I
C
= 100
µ
A, I
B
= 0
120
V
Emitter - Base Breakdown Voltage
V
(BR)EBO
I
E
= 100nA, I
C
= 0
3
V
Collector Cutoff Current
I
CES
V
CE
= 110V, V
BE
= 0
100
nA
On Characteristics
DC Current Gain
H
FE
I
C
= 50mA, V
CE
= 15V
30
-
Dynamic Characteristics
Output Capacitance
C
OB
V
CB
= 10V, IE = 0, f = 1MHz
2.8
pF
Collector Base Capacitance
C
CB
V
CB
= 10V, IE = 0, f = 1MHz
2.2
pF
Input Capacitance
C
IB
V
EB
= 3V, f = 1MHz
5.8
pF
Transistor Frequency
f
T
V
CE
= 15V, I
C
= 50mA
1.2
GHz
TYPICAL PERFORMANCE CHARACTERISTICS
0
3
6
9
27
0
8
4
Junction Capacitance vs Voltage
30
COLLECTOR BASE VOLTAGE (V)
CAPACITANCE (pF)
2
10
6
0
30
60
400
1400
Gain Bandwidth Product vs
Collector Current
90
150
600
800
1200
GAIN BANDWIDTH PRODUCT (MHz)
12 15 18 21 24
0
1
0
16
8
Input Capacitance vs Voltage
5
EMITTER BASE VOLTAGE (V)
CAPACITANCE (pF)
4
20
12
2
3
4
1000
COLLECTOR CURRENT (mA)
C
OB
C
CB
C
IB
15
45
75
105
f =250MHz
V
CE
= 25V
120 135
Advanced Monolithic Systems, Inc. 6680B Sierra Lane, Dublin, CA 94568 Phone (925) 556-9090 Fax (925) 556-9140
AMS264
PACKAGE DIMENSIONS inches (millimeters) unless otherwise noted.
3 LEAD TO-220 PLASTIC PACKAGE (T)
0.330-0.370
0.050
(8.382-9.398)
0.090-0.110
(2.286-2.794)
(1.270)
TYP
0.390-0.415
(9.906-10.541)
0.165-0.180
(4.191-4.572)
0.045-0.055
(1.143-1.397)
0.095-0.115
(2.413-2.921)
0.013-0.023
(0.330-0.584)
T (TO-220) AMS DRW# 042193
0.147-0.155
(3.734-3.937)
DIA
0.230-0.270
(5.842-6.858)
0.460-0.500
(11.684-12.700)
0.570-0.620
(14.478-15.748)
0.218-0.252
(5.537-6.401)
0.520-0.570
(13.208-14.478)
0.980-1.070
(24.892-27.178)
0.028-0.038
(0.711-0.965)
PDF 
ZIP