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MSC2712YT1G

MSC2712YT1G — TRANS NPN GP BIPO 50V SC-59

ManufacturerON Semiconductor
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic500mV @ 10mA, 100mA
Current - Collector (Ic) (Max)100mA
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 2mA, 6V
Power - Max200mW
Frequency - Transition50MHz
Transistor TypeNPN
Mounting TypeSurface Mount
Package / CaseSC-59-3, SMT3, SOT-346, TO-236
Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
MSC2712GT1MSC2712GT1ON SemiconductorTRANS SS GP NPN 50V SC59
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 100nA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V  ·  Power - Max: 200mW  ·  Frequency - Transition: 50MHz  ·  Transistor Type: NPN  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-59-3, SMT3, SOT-346, TO-236
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MSC2712GT1GMSC2712GT1GON SemiconductorTRANS GP SS NPN 50V SC59
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 100nA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V  ·  Power - Max: 200mW  ·  Frequency - Transition: 50MHz  ·  Transistor Type: NPN  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-59-3, SMT3, SOT-346, TO-236
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