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Discrete Semiconductor Products  ·  Transistors (BJT) - Single
 
MMBTA28-7

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MMBTA28-7 — TRANS BIPO NPN DARL 80V SOT23-3

ManufacturerDiodes Inc
Voltage - Collector Emitter Breakdown (Max)80V
Vce Saturation (Max) @ Ib, Ic1.5V @ 100µA, 100mA
Current - Collector (Ic) (Max)500mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 10mA, 5V
Power - Max300mW
Frequency - Transition125MHz
Transistor TypeNPN - Darlington
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Found under nameMMBTA28DITR
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PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
MMBTA28-7-FMMBTA28-7-FDiodes IncTRANS BIPO NPN DARL 80V SOT23-3
Voltage - Collector Emitter Breakdown (Max): 80V  ·  Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA  ·  Current - Collector (Ic) (Max): 500mA  ·  Current - Collector Cutoff (Max): 500nA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 10mA, 5V  ·  Power - Max: 300mW  ·  Frequency - Transition: 125MHz  ·  Transistor Type: NPN - Darlington  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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