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MMBT200A

MMBT200A — TRANSISTOR PNP GP SOT-23

ManufacturerFairchild Semiconductor
Harmful substancesRoHS   Lead-free
Pay attentionMold Compound Change 12/Dec/2007
Voltage - Collector Emitter Breakdown (Max)45V
Vce Saturation (Max) @ Ib, Ic200mV @ 1mA, 10mA
Current - Collector (Ic) (Max)500mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 10mA, 1V
Power - Max350mW
Frequency - Transition250MHz
Transistor TypePNP
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
MMBT200MMBT200Fairchild SemiconductorTRANSISTOR PNP GP SOT-23
Voltage - Collector Emitter Breakdown (Max): 45V  ·  Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA  ·  Current - Collector (Ic) (Max): 500mA  ·  Current - Collector Cutoff (Max): 50nA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V  ·  Power - Max: 350mW  ·  Frequency - Transition: 250MHz  ·  Transistor Type: PNP  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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