Log in    Register
ChipFind Component Selection Catalog
For example: transistor, max232, lt319a
  

Discrete Semiconductor Products  ·  Transistors (BJT) - Single
 
MJE803G

- Dimensional Drawing

MJE803G — TRANS DARL NPN 4A 80V TO225AA

ManufacturerON Semiconductor
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)80V
Vce Saturation (Max) @ Ib, Ic2.8V @ 40mA, 2A
Current - Collector (Ic) (Max)4A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 2A, 3V
Power - Max40W
Transistor TypeNPN - Darlington
Mounting TypeThrough Hole
Package / CaseTO-225-3
Found under nameMJE803GOS
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
MJE803MJE803ON SemiconductorTRANS DARL NPN 4A 80V TO225AA
Voltage - Collector Emitter Breakdown (Max): 80V  ·  Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A  ·  Current - Collector (Ic) (Max): 4A  ·  Current - Collector Cutoff (Max): 100µA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V  ·  Power - Max: 40W  ·  Transistor Type: NPN - Darlington  ·  Mounting Type: Through Hole  ·  Package / Case: TO-225-3
Additional information
Find at suppliers

Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
MJE703GMJE703GON SemiconductorTRANS DARL PNP 4A 80V TO-225
Voltage - Collector Emitter Breakdown (Max): 80V  ·  Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A  ·  Current - Collector (Ic) (Max): 4A  ·  Current - Collector Cutoff (Max): 100µA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V  ·  Power - Max: 40W  ·  Transistor Type: PNP - Darlington  ·  Mounting Type: Through Hole  ·  Package / Case: TO-225-3
from 0,23
from 0,61		Additional information
Find at suppliers
2N60392N6039ON SemiconductorTRANS DARL NPN 4A 80V TO225AA
Voltage - Collector Emitter Breakdown (Max): 80V  ·  Vce Saturation (Max) @ Ib, Ic: 2V @ 8mA, 2A  ·  Current - Collector (Ic) (Max): 4A  ·  Current - Collector Cutoff (Max): 100µA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V  ·  Power - Max: 40W  ·  Transistor Type: NPN - Darlington  ·  Mounting Type: Through Hole  ·  Package / Case: TO-225-3
from 0,29Additional information
Find at suppliers
BD679AGON SemiconductorTRANS DARL NPN 80V 4A BIPO TO225
Voltage - Collector Emitter Breakdown (Max): 80V  ·  Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A  ·  Current - Collector (Ic) (Max): 4A  ·  Current - Collector Cutoff (Max): 500µA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V  ·  Power - Max: 40W  ·  Transistor Type: NPN - Darlington  ·  Mounting Type: Through Hole  ·  Package / Case: TO-225-3
from 0,29Additional information
Find at suppliers
MJE703ON SemiconductorTRANS DARL PNP 4A 80V TO-225
Voltage - Collector Emitter Breakdown (Max): 80V  ·  Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A  ·  Current - Collector (Ic) (Max): 4A  ·  Current - Collector Cutoff (Max): 100µA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V  ·  Power - Max: 40W  ·  Transistor Type: PNP - Darlington  ·  Mounting Type: Through Hole  ·  Package / Case: TO-225-3
Additional information
Find at suppliers
2N6039G2N6039GON SemiconductorTRANS DARL NPN 4A 80V TO225AA
Voltage - Collector Emitter Breakdown (Max): 80V  ·  Vce Saturation (Max) @ Ib, Ic: 2V @ 8mA, 2A  ·  Current - Collector (Ic) (Max): 4A  ·  Current - Collector Cutoff (Max): 100µA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V  ·  Power - Max: 40W  ·  Transistor Type: NPN - Darlington  ·  Mounting Type: Through Hole  ·  Package / Case: TO-225-3
from 0,28
from 0,74		Additional information
Find at suppliers

Search «MJE803G» in:  Google   Yahoo   MSN Report an error  

© 2006 — 2024 ChipFind Ltd.
Contact phone, e-mail, ICQ		 Catalog with parameters for 1,401,534 components Register • Advertising