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Discrete Semiconductor Products  ·  Transistors (BJT) - Single

 
MJE171

MJE171 — TRANS PWR PNP 3A 60V TO225AA

ManufacturerON Semiconductor
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic300mV @ 50mA, 500mA
Current - Collector (Ic) (Max)3A
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA, 1V
Power - Max12.5W
Frequency - Transition50MHz
Transistor TypePNP
Mounting TypeThrough Hole
Package / CaseTO-225-3
Found under nameMJE171OS
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
MJE171GMJE171GON SemiconductorTRANS POWER PNP 3A 60V TO225AA
Voltage - Collector Emitter Breakdown (Max): 60V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA  ·  Current - Collector (Ic) (Max): 3A  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V  ·  Power - Max: 12.5W  ·  Frequency - Transition: 50MHz  ·  Transistor Type: PNP  ·  Mounting Type: Through Hole  ·  Package / Case: TO-225-3
from 0,21
from 0,63
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Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
MJE170GMJE170GON SemiconductorTRANS POWER PNP 3A 40V TO225AA
Voltage - Collector Emitter Breakdown (Max): 40V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA  ·  Current - Collector (Ic) (Max): 3A  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V  ·  Power - Max: 12.5W  ·  Frequency - Transition: 50MHz  ·  Transistor Type: PNP  ·  Mounting Type: Through Hole  ·  Package / Case: TO-225-3
from 0,21
from 0,63
Additional information
Find at suppliers
MJE170MJE170ON SemiconductorTRANS PWR PNP 3A 40V TO225AA
Voltage - Collector Emitter Breakdown (Max): 40V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA  ·  Current - Collector (Ic) (Max): 3A  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V  ·  Power - Max: 12.5W  ·  Frequency - Transition: 50MHz  ·  Transistor Type: PNP  ·  Mounting Type: Through Hole  ·  Package / Case: TO-225-3
Additional information
Find at suppliers
MJE172MJE172ON SemiconductorTRANS PWR PNP 3A 80V TO225AA
Voltage - Collector Emitter Breakdown (Max): 80V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA  ·  Current - Collector (Ic) (Max): 3A  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V  ·  Power - Max: 12.5W  ·  Frequency - Transition: 50MHz  ·  Transistor Type: PNP  ·  Mounting Type: Through Hole  ·  Package / Case: TO-225-3
Additional information
Find at suppliers
MJE172GMJE172GON SemiconductorTRANS PWR PNP 3A 80V TO225AA
Voltage - Collector Emitter Breakdown (Max): 80V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA  ·  Current - Collector (Ic) (Max): 3A  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V  ·  Power - Max: 12.5W  ·  Frequency - Transition: 50MHz  ·  Transistor Type: PNP  ·  Mounting Type: Through Hole  ·  Package / Case: TO-225-3
from 0,21
from 0,63
Additional information
Find at suppliers
MJE181GMJE181GON SemiconductorTRANS POWER NPN 3A 60V TO225AA
Voltage - Collector Emitter Breakdown (Max): 60V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA  ·  Current - Collector (Ic) (Max): 3A  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V  ·  Power - Max: 12.5W  ·  Frequency - Transition: 50MHz  ·  Transistor Type: NPN  ·  Mounting Type: Through Hole  ·  Package / Case: TO-225-3
from 0,21
from 0,63
Additional information
Find at suppliers
MJE181MJE181ON SemiconductorTRANS PWR NPN 3A 60V TO225AA
Voltage - Collector Emitter Breakdown (Max): 60V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA  ·  Current - Collector (Ic) (Max): 3A  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V  ·  Power - Max: 12.5W  ·  Frequency - Transition: 50MHz  ·  Transistor Type: NPN  ·  Mounting Type: Through Hole  ·  Package / Case: TO-225-3
Additional information
Find at suppliers

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