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MJD32T4

MJD32T4 — TRANS POWER PNP 3A 40V DPAK

ManufacturerON Semiconductor
Voltage - Collector Emitter Breakdown (Max)40V
Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
Current - Collector (Ic) (Max)3A
Current - Collector Cutoff (Max)50µA
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A, 4V
Power - Max15W
Frequency - Transition3MHz
Transistor TypePNP
Mounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63
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MJD32RLGMJD32RLGON SemiconductorTRANS POWER PNP 3A 40V DPAK
Voltage - Collector Emitter Breakdown (Max): 40V  ·  Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A  ·  Current - Collector (Ic) (Max): 3A  ·  Current - Collector Cutoff (Max): 50µA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V  ·  Power - Max: 15W  ·  Frequency - Transition: 3MHz  ·  Transistor Type: PNP  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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MJD32T4GMJD32T4GON SemiconductorTRANS POWER PNP 3A 40V DPAK
Voltage - Collector Emitter Breakdown (Max): 40V  ·  Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A  ·  Current - Collector (Ic) (Max): 3A  ·  Current - Collector Cutoff (Max): 50µA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V  ·  Power - Max: 15W  ·  Frequency - Transition: 3MHz  ·  Transistor Type: PNP  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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Voltage - Collector Emitter Breakdown (Max): 100V  ·  Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A  ·  Current - Collector (Ic) (Max): 3A  ·  Current - Collector Cutoff (Max): 50µA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V  ·  Power - Max: 15W  ·  Frequency - Transition: 3MHz  ·  Transistor Type: PNP  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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Voltage - Collector Emitter Breakdown (Max): 100V  ·  Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A  ·  Current - Collector (Ic) (Max): 3A  ·  Current - Collector Cutoff (Max): 50µA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V  ·  Power - Max: 15W  ·  Frequency - Transition: 3MHz  ·  Transistor Type: PNP  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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MJD31T4MJD31T4ON SemiconductorTRANS POWER NPN 3A 40V DPAK
Voltage - Collector Emitter Breakdown (Max): 40V  ·  Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A  ·  Current - Collector (Ic) (Max): 3A  ·  Current - Collector Cutoff (Max): 50µA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V  ·  Power - Max: 15W  ·  Frequency - Transition: 3MHz  ·  Transistor Type: NPN  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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