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Discrete Semiconductor Products  ·  Transistors (BJT) - Single
 
MJ14002

MJ14002 — TRANS PWR NPN 60A 80V TO3

ManufacturerON Semiconductor
Voltage - Collector Emitter Breakdown (Max)80V
Vce Saturation (Max) @ Ib, Ic1V @ 2.5A, 25A
Current - Collector (Ic) (Max)60A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 50A, 3V
Power - Max300W
Transistor TypeNPN
Mounting TypeChassis Mount
Package / CaseTO-204, TO-3
Found under nameMJ14002OS
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
MJ14002GMJ14002GON SemiconductorTRANS PWR NPN 60A 80V TO3
Voltage - Collector Emitter Breakdown (Max): 80V  ·  Vce Saturation (Max) @ Ib, Ic: 1V @ 2.5A, 25A  ·  Current - Collector (Ic) (Max): 60A  ·  Current - Collector Cutoff (Max): 1mA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 50A, 3V  ·  Power - Max: 300W  ·  Transistor Type: NPN  ·  Mounting Type: Chassis Mount  ·  Package / Case: TO-204, TO-3
from 7,67
from 13,78		Additional information
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