Discrete Semiconductor Products · Transistors (BJT) - Single

Manufacturer	Infineon Technologies
Harmful substances	RoHS Lead-free

Voltage - Collector Emitter Breakdown (Max)	45V
Vce Saturation (Max) @ Ib, Ic	300mV @ 10mA, 100mA
Current - Collector (Ic) (Max)	800mA
DC Current Gain (hFE) (Min) @ Ic, Vce	250 @ 100mA, 1V
Power - Max	330mW
Frequency - Transition	200MHz
Transistor Type	PNP
Mounting Type	Surface Mount
Package / Case	SOT-23
Found under name	BCW68HE6327INCT

Photo	Name	Manufacturer	Technical parameters	Prices (rub.)	Buy
	BCW 68G E6327	Infineon Technologies	TRANSISTOR PNP AF 45V SOT-23 Voltage - Collector Emitter Breakdown (Max): 45V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA · Current - Collector (Ic) (Max): 800mA · DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V · Power - Max: 330mW · Frequency - Transition: 200MHz · Transistor Type: PNP · Mounting Type: Surface Mount · Package / Case: SOT-23	from 0,03	Additional information Find at suppliers
	BCW 68F E6327	Infineon Technologies	TRANSISTOR PNP AF 45V SOT-23 Voltage - Collector Emitter Breakdown (Max): 45V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA · Current - Collector (Ic) (Max): 800mA · DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V · Power - Max: 330mW · Frequency - Transition: 200MHz · Transistor Type: PNP · Mounting Type: Surface Mount · Package / Case: SOT-23	from 0,03	Additional information Find at suppliers
	BCW 67C E6327	Infineon Technologies	TRANSISTOR PNP AF 32V SOT-23 Voltage - Collector Emitter Breakdown (Max): 32V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA · Current - Collector (Ic) (Max): 800mA · DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V · Power - Max: 330mW · Frequency - Transition: 200MHz · Transistor Type: PNP · Mounting Type: Surface Mount · Package / Case: SOT-23	from 0,03	Additional information Find at suppliers

Catalog with parameters for 1,401,534 components