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Discrete Semiconductor Products  ·  Transistors (BJT) - Single
 
BCW65CLT1

BCW65CLT1 — TRANS NPN GP 32V 800MA SOT-23

ManufacturerON Semiconductor
Voltage - Collector Emitter Breakdown (Max)32V
Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
Current - Collector (Ic) (Max)800mA
Current - Collector Cutoff (Max)20nA
DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 100mA, 1V
Power - Max225mW
Frequency - Transition100MHz
Transistor TypeNPN
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
BCW65ALT1BCW65ALT1ON SemiconductorTRANS NPN GP 32V 800MA SOT-23
Voltage - Collector Emitter Breakdown (Max): 32V  ·  Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA  ·  Current - Collector (Ic) (Max): 800mA  ·  Current - Collector Cutoff (Max): 20nA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V  ·  Power - Max: 225mW  ·  Frequency - Transition: 100MHz  ·  Transistor Type: NPN  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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