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BC373G

- Additional photo

BC373G — TRANS SS DARL NPN 80V 1A TO-92

ManufacturerON Semiconductor
Harmful substancesRoHS   Lead-free
Pay attentionProduct Discontinuation 02/Jan/2007
Voltage - Collector Emitter Breakdown (Max)80V
Vce Saturation (Max) @ Ib, Ic1.1V @ 250µA, 250mA
Current - Collector (Ic) (Max)1A
DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA, 5V
Power - Max1.5W
Frequency - Transition200MHz
Transistor TypeNPN - Darlington
Mounting TypeThrough Hole
Package / CaseTO-92-3 (Standard Body), TO-226
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BC373ZL1GBC373ZL1GON SemiconductorTRANS SS DARL NPN 80V 1A TO-92
Voltage - Collector Emitter Breakdown (Max): 80V  ·  Vce Saturation (Max) @ Ib, Ic: 1.1V @ 250µA, 250mA  ·  Current - Collector (Ic) (Max): 1A  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V  ·  Power - Max: 1.5W  ·  Frequency - Transition: 200MHz  ·  Transistor Type: NPN - Darlington  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
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BC373RL1BC373RL1ON SemiconductorTRANS SS DARL NPN 80V 1A TO-92
Voltage - Collector Emitter Breakdown (Max): 80V  ·  Vce Saturation (Max) @ Ib, Ic: 1.1V @ 250µA, 250mA  ·  Current - Collector (Ic) (Max): 1A  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V  ·  Power - Max: 1.5W  ·  Frequency - Transition: 200MHz  ·  Transistor Type: NPN - Darlington  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
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BC373BC373ON SemiconductorTRANS SS DARL NPN 80V 1A TO-92
Voltage - Collector Emitter Breakdown (Max): 80V  ·  Vce Saturation (Max) @ Ib, Ic: 1.1V @ 250µA, 250mA  ·  Current - Collector (Ic) (Max): 1A  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V  ·  Power - Max: 1.5W  ·  Frequency - Transition: 200MHz  ·  Transistor Type: NPN - Darlington  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
Additional information
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BC373ZL1BC373ZL1ON SemiconductorTRANS SS DARL NPN 80V 1A TO-92
Voltage - Collector Emitter Breakdown (Max): 80V  ·  Vce Saturation (Max) @ Ib, Ic: 1.1V @ 250µA, 250mA  ·  Current - Collector (Ic) (Max): 1A  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V  ·  Power - Max: 1.5W  ·  Frequency - Transition: 200MHz  ·  Transistor Type: NPN - Darlington  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
Additional information
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BC373RL1GBC373RL1GON SemiconductorTRANS SS DARL NPN 80V 1A TO-92
Voltage - Collector Emitter Breakdown (Max): 80V  ·  Vce Saturation (Max) @ Ib, Ic: 1.1V @ 250µA, 250mA  ·  Current - Collector (Ic) (Max): 1A  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V  ·  Power - Max: 1.5W  ·  Frequency - Transition: 200MHz  ·  Transistor Type: NPN - Darlington  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
from 0,06Additional information
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PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
BC372BC372ON SemiconductorTRANS SS DARL NPN 100V 1A TO-92
Voltage - Collector Emitter Breakdown (Max): 100V  ·  Vce Saturation (Max) @ Ib, Ic: 1.1V @ 250µA, 250mA  ·  Current - Collector (Ic) (Max): 1A  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V  ·  Power - Max: 1.5W  ·  Frequency - Transition: 200MHz  ·  Transistor Type: NPN - Darlington  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
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BC372GBC372GON SemiconductorTRANS SS DARL NPN 100V 1A TO-92
Voltage - Collector Emitter Breakdown (Max): 100V  ·  Vce Saturation (Max) @ Ib, Ic: 1.1V @ 250µA, 250mA  ·  Current - Collector (Ic) (Max): 1A  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V  ·  Power - Max: 1.5W  ·  Frequency - Transition: 200MHz  ·  Transistor Type: NPN - Darlington  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
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