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Discrete Semiconductor Products  ·  Transistors (BJT) - Single
 
2N6036G

- Dimensional Drawing

2N6036G — TRANS DARL PNP 4A 80V TO225AA

ManufacturerON Semiconductor
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)80V
Vce Saturation (Max) @ Ib, Ic2V @ 8mA, 2A
Current - Collector (Ic) (Max)4A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 2A, 3V
Power - Max40W
Transistor TypePNP - Darlington
Mounting TypeThrough Hole
Package / CaseTO-225-3
Found under name2N6036GOS
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Voltage - Collector Emitter Breakdown (Max): 80V  ·  Vce Saturation (Max) @ Ib, Ic: 2V @ 8mA, 2A  ·  Current - Collector (Ic) (Max): 4A  ·  Current - Collector Cutoff (Max): 100µA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V  ·  Power - Max: 40W  ·  Transistor Type: PNP - Darlington  ·  Mounting Type: Through Hole  ·  Package / Case: TO-225-3
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