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Discrete Semiconductor Products  ·  Transistors (BJT) - Single, Pre-Biased

 
DTC123JET1G

DTC123JET1G — TRANS NPN 50V 2.2/47K SC75-3

ManufacturerON Semiconductor
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)2.2K
Resistor - Emitter Base (R2) (Ohms)47K
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector (Ic) (Max)100mA
Current - Collector Cutoff (Max)500nA
Power - Max200mW
Transistor TypeNPN - Pre-Biased
Mounting TypeSurface Mount
Package / CaseSC-75-3, SOT-416, EMT3, 3-SSMini
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
DTC123JET1DTC123JET1ON SemiconductorTRANS NPN 50V 2.2/47K SC75-3
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 2.2K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Power - Max: 200mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
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DTC143ZET1GDTC143ZET1GON SemiconductorTRANS NPN 50V 4.7/47K SC75-3
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 4.7K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Power - Max: 200mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
from 0,02Additional information
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DTC144EET1DTC144EET1ON SemiconductorTRANS BIAS NPN 50V SOT416
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 47K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Power - Max: 200mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
Additional information
Find at suppliers
DTC144EET1GDTC144EET1GON SemiconductorTRANS BIAS NPN 50V SC75-3
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 47K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Power - Max: 200mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
from 0,04
from 0,41
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DTA123JET1GDTA123JET1GON SemiconductorTRANS PNP 50V 2.2/4.7K SC75-3
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 2.2K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Power - Max: 200mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
Additional information
Find at suppliers
DTA123JET1DTA123JET1ON SemiconductorTRANS PNP 50V 2.2/4.7K SC75-3
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 2.2K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Power - Max: 200mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
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