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Discrete Semiconductor Products  ·  Transistors (BJT) - Single, Pre-Biased
 
DTA114EUAT106

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DTA114EUAT106 — TRAN DIGITL PNP 50V 50MA SOT-323

ManufacturerRohm Semiconductor
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)10K
Resistor - Emitter Base (R2) (Ohms)10K
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector (Ic) (Max)100mA
Frequency - Transition250MHz
Power - Max200mW
Transistor TypePNP - Pre-Biased
Mounting TypeSurface Mount
Package / CaseSC-70-3, SOT-323-3
Found under nameDTA114EUAT106CT
Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
DTA114GUAT106DTA114GUAT106Rohm SemiconductorTRANS DGTL PNP 50V 100MA SOT-323
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Emitter Base (R2) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Frequency - Transition: 250MHz  ·  Power - Max: 200mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-3, SOT-323-3
from 0,04
from 0,26		Additional information
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DDTA114EUA-7-FDDTA114EUA-7-FDiodes IncTRANS PREBIAS PNP 200MW SC70-3
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  Resistor - Emitter Base (R2) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Frequency - Transition: 250MHz  ·  Power - Max: 200mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-3, SOT-323-3
from 0,02
from 0,04		Additional information
Find at suppliers
DDTA114EUA-7DDTA114EUA-7Diodes IncTRANS PREBIAS PNP 200MW SC70-3
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  Resistor - Emitter Base (R2) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Frequency - Transition: 250MHz  ·  Power - Max: 200mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-3, SOT-323-3
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