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Photo | Name | Manufacturer | Technical parameters | Prices (rub.) | Buy |
![]() | IRF9953 | International Rectifier | MOSFET 2P-CH 30V 2.3A 8-SOIC Series: HEXFET® · Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.3A · Input Capacitance (Ciss) @ Vds: 190pF @ 15V · FET Polarity: 2 P-Channel (Dual) · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | Additional information Find at suppliers |
Photo | Name | Manufacturer | Technical parameters | Prices (rub.) | Buy |
![]() | IRF9953TRPBF | International Rectifier | MOSFET 2P-CH 30V 2.3A 8-SOIC Series: HEXFET® · Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.3A · Input Capacitance (Ciss) @ Vds: 190pF @ 15V · FET Polarity: 2 P-Channel (Dual) · FET Feature: Standard · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | from 0,25 from 0,31 | Additional information Find at suppliers |
![]() | IRF9953PBF | International Rectifier | MOSFET 2P-CH 30V 2.3A 8-SOIC Series: HEXFET® · Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.3A · Input Capacitance (Ciss) @ Vds: 190pF @ 15V · FET Polarity: 2 P-Channel (Dual) · FET Feature: Standard · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | from 0,33 | Additional information Find at suppliers |
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