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IRF8910TR — MOSFET 2N-CH 20V 10A 8-SOIC
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| Photo | Name | Manufacturer | Technical parameters | Prices (rub.) | Buy |
 | IRF8910 | International Rectifier | MOSFET 2N-CH 20V 10A 8-SOIC Series: HEXFET® · Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 11nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 960pF @ 10V · FET Polarity: 2 N-Channel (Dual) · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | from 1,16 | Additional information Find at suppliers |
| IRF8910PBF | International Rectifier | MOSFET 2N-CH 20V 10A 8-SOIC Series: HEXFET® · Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 11nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 960pF @ 10V · FET Polarity: 2 N-Channel (Dual) · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | from 0,41 | Additional information Find at suppliers |
| IRF8910TRPBF | International Rectifier | HEX/MOS N-CH DUAL 20V 10A 8SOIC Series: HEXFET® · Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 11nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 960pF @ 10V · FET Polarity: 2 N-Channel (Dual) · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | from 0,45 from 1,41 | Additional information Find at suppliers |
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