TK12X60U(TE24L,Q) — MOSFET N-CH 600V 12A TFP
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| Photo | Name | Manufacturer | Technical parameters | Prices (rub.) | Buy |
| 2SK4105(Q,T) | Toshiba | MOSFET N-CH 500V 8A TO-220 Drain to Source Voltage (Vdss): 500V · Current - Continuous Drain (Id) @ 25° C: 8A · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Through Hole · Package / Case: TO-220 | from 1,06 | Additional information Find at suppliers | |
 | 2SK2961(F,M) | Toshiba | MOSFET N-CH 60V 2A TO-92 Rds On (Max) @ Id, Vgs: 270 mOhm @ 1A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 5.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 170pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 900mW · Mounting Type: Through Hole · Package / Case: TO-92-3 (Long Body), TO-226 | from 0,25 | Additional information Find at suppliers |
 | TPC6111(TE85L,F) | Toshiba | MOSFET P-CH -20V -5.5A VS-6 Drain to Source Voltage (Vdss): 20V · Current - Continuous Drain (Id) @ 25° C: 5.5A · FET Polarity: P-Channel · FET Feature: Standard · Mounting Type: Surface Mount · Package / Case: VS-6 (SOT-23-6) | from 0,24 from 0,72 | Additional information Find at suppliers |
| TPCF8104(TE85L) | Toshiba | MOSFET P-CH 30V 6A VS-8 Rds On (Max) @ Id, Vgs: 28 mOhm @ 3A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 34nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 1760pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 700mW · Mounting Type: Surface Mount · Package / Case: VS-8 (2-3U1A) | Additional information Find at suppliers | ||
| 2SK2841 | Toshiba | MOSFET N-CH 400V 10A TO-220AB Rds On (Max) @ Id, Vgs: 550 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 34nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1340pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 80W · Mounting Type: Through Hole · Package / Case: TO-220AB | Additional information Find at suppliers | ||
| 2SK3497(F) | Toshiba | MOSFET N-CH 180V 10A SC-67 Drain to Source Voltage (Vdss): 180V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 2400pF @ 30V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 130W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | from 1,79 | Additional information Find at suppliers | |
| TPC8014(TE12L,Q,M) | Toshiba | MOSFET N-CH 30V 11A SOP8 2-6J1B Rds On (Max) @ Id, Vgs: 14 mOhm @ 5.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 39nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1860pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: 2-6J1B | from 0,30 | Additional information Find at suppliers | |
| 2SK2968 | Toshiba | MOSFET N-CH 900V 10A 2-16C1B Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 4A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 70nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 2150pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | Additional information Find at suppliers | ||
| 2SK2233 | Toshiba | MOSFET N-CH 60V 45A 2-16C1B Rds On (Max) @ Id, Vgs: 30 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 1800pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | Additional information Find at suppliers | ||
| 2SK2201(TE16R) | Toshiba | MOSFET N-CH 100V 3A 2-7B2B Rds On (Max) @ Id, Vgs: 350 mOhm @ 2A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 13.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3A · Input Capacitance (Ciss) @ Vds: 280pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: 2-7J1B | Additional information Find at suppliers | ||
| 2SJ378(TP,Q) | Toshiba | MOSFET P-CH 60V 5A TPS Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 22nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 630pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.3W · Mounting Type: Through Hole | from 0,48 | Additional information Find at suppliers | |
 | TPC8045-H(TE12L,QM | Toshiba | MOSFET N-CH 40V 18A 8-SOP Drain to Source Voltage (Vdss): 40V · Current - Continuous Drain (Id) @ 25° C: 18A · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Surface Mount · Package / Case: 8-SOP | from 1,09 from 2,09 | Additional information Find at suppliers |
| 2SK3265(F,T) | Toshiba | MOSFET N-CH 700V 10A SC-67 Rds On (Max) @ Id, Vgs: 1 Ohm @ 5A, 10V · Drain to Source Voltage (Vdss): 700V · Gate Charge (Qg) @ Vgs: 53nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: 2-10R1B | from 1,69 | Additional information Find at suppliers | |
 | TPCA8006-H(TE12L,Q | Toshiba | MOSFET N-CH 100V 18A 8-SOPA Rds On (Max) @ Id, Vgs: 67 mOhm @ 9A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 780pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Surface Mount · Package / Case: 8-SOPA | from 0,92 from 0,98 | Additional information Find at suppliers |
 | TPCA8009-H(TE12L,Q | Toshiba | MOSFET N-CH 150V 7A 8-SOPA Rds On (Max) @ Id, Vgs: 350 mOhm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 10nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 600pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Surface Mount · Package / Case: 8-SOPA | from 1,79 from 3,44 | Additional information Find at suppliers |
| 2SK2964(TE12L) | Toshiba | MOSFET N-CH 30V 2A PW-MINI Rds On (Max) @ Id, Vgs: 180 mOhm @ 1A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 5.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 140pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: PW-MINI | Additional information Find at suppliers | ||
| 2SK2964(TE12L,F) | Toshiba | MOSFET N-CH 30V 2A PW-MINI Rds On (Max) @ Id, Vgs: 180 mOhm @ 1A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 5.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 140pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: PW-MINI | from 0,28 | Additional information Find at suppliers | |
| 2SK1382(Q) | Toshiba | MOSFET N-CH 100V 60A TO-3PL Rds On (Max) @ Id, Vgs: 20 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 176nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 60A · Input Capacitance (Ciss) @ Vds: 7000pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 200W · Mounting Type: Through Hole · Package / Case: TO-3P(L) (2-21F1B) | from 8,58 | Additional information Find at suppliers | |
| 2SK2838(SM,Q) | Toshiba | MOSFET N-CH 400V 5.5A TO-220SM Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.5A · Input Capacitance (Ciss) @ Vds: 720pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: 2-10S1B | from 1,29 | Additional information Find at suppliers | |
| TPCP8005-H(TE85L,F | Toshiba | MOSFET N-CH 30V 11A PS-8 Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 5.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 20nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 2150pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 840mW · Mounting Type: Surface Mount · Package / Case: 2-3V1K | from 0,37 from 0,40 | Additional information Find at suppliers | |
| 2SK2967(F) | Toshiba | MOSFET N-CH 250V 30A 2-16C1B Rds On (Max) @ Id, Vgs: 68 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 132nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 5400pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | from 3,89 | Additional information Find at suppliers | |
 | TPC8106-H(TE12L) | Toshiba | MOSFET P-CH 30V 10A 8-SOP Rds On (Max) @ Id, Vgs: 20 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 52nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 2160pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2.4W · Mounting Type: Surface Mount · Package / Case: 8-SOP | Additional information Find at suppliers | |
| 2SK3863(TE16L1,Q) | Toshiba | MOSFET N-CH 500V 5A SC-64 Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 16nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 550pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Surface Mount | from 0,77 | Additional information Find at suppliers | |
| 2SK2610(F,T) | Toshiba | MOSFET N-CH 900V 5A 2-16C1B Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 1200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | from 1,70 | Additional information Find at suppliers | |
| 2SK2993(TE24L,Q) | Toshiba | MOSFET N-CH 250V 20A TO-220FL Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 100nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 4000pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: TO-220FL | from 1,88 | Additional information Find at suppliers |
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