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STW20NM50FD

- Dimensional Drawing

STW20NM50FD — MOSFET N-CH 500V 20A TO-247

ManufacturerSTMicroelectronics
Harmful substancesRoHS   Lead-free
SeriesFDmesh™
Rds On (Max) @ Id, Vgs250 mOhm @ 10A, 10V
Drain to Source Voltage (Vdss)500V
Gate Charge (Qg) @ Vgs53nC @ 10V
Current - Continuous Drain (Id) @ 25° C20A
Input Capacitance (Ciss) @ Vds1380pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max214W
Mounting TypeThrough Hole
Package / CaseTO-247-3
Found under name497-2717-5
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
STF11NM60NDSTMicroelectronicsMOSFET N-CH 600V 10A TO-220FP
Series: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 850pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220FP
from 1,69Additional information
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STP11NM60FDFPSTP11NM60FDFPSTMicroelectronicsMOSFET N-CH 600V 11A TO-220FP
Series: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 40nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 35W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
from 2,32
from 4,64		Additional information
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STD12NM50NDSTMicroelectronicsMOSFET N-CH 500V 11A DPAK
Series: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 850pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
from 1,89
from 4,41		Additional information
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STW14NM50FDSTW14NM50FDSTMicroelectronicsMOSFET N-CH 500V 14A TO-247
Series: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 1000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 160W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
Additional information
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STI25NM60NDSTMicroelectronicsMOSFET N-CH 600V 21A I2PAK
Series: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 80nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 2400pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 160W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
from 3,70Additional information
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STW21NM60NDSTW21NM60NDSTMicroelectronicsMOSFET N-CH 600V 17A TO-247
Series: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 220 mOhm @ 8.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  Input Capacitance (Ciss) @ Vds: 1800pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 140W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
from 2,94
from 6,96		Additional information
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STW20NM60FDSTW20NM60FDSTMicroelectronicsMOSFET N-CH 600V 20A TO-247
Series: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 290 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 37nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 214W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
from 3,19
from 6,38		Additional information
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STI11NM60NDSTMicroelectronicsMOSFET N-CH 600V 10A I2PAK
Series: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 850pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
from 1,61Additional information
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STB15NM60NDSTB15NM60NDSTMicroelectronicsMOSFET N-CH 600V 14A D2PAK
Series: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 299 mOhm @ 7A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 40nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 1250pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 3,52
from 6,48		Additional information
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STP12NM50FDSTP12NM50FDSTMicroelectronicsMOSFET N-CH 500V 12A TO-220
Series: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 1000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 160W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
Additional information
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STB11NM60FDT4STB11NM60FDT4STMicroelectronicsMOSFET N-CH 600V 11A D2PAK
Series: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 40nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 160W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 3,23
from 5,95		Additional information
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STP20NM50FDSTP20NM50FDSTMicroelectronicsMOSFET N-CH 500V 20A TO-220
Series: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 53nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 1380pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 192W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 2,70
from 6,38		Additional information
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STW25NM60NDSTW25NM60NDSTMicroelectronicsMOSFET N-CH 600V 21A TO-247
Series: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 80nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 2400pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 160W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
from 4,04
from 8,58		Additional information
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STP30NM60NDSTP30NM60NDSTMicroelectronicsMOSFET N-CH 600V 25A TO-220
Series: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 130 mOhm @ 12.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 100nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 2800pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 190W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 4,13
from 8,58		Additional information
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STP11NM60NDSTP11NM60NDSTMicroelectronicsMOSFET N-CH 600V 10A TO-220
Series: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 850pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 1,54
from 3,48		Additional information
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STF30NM60NDSTMicroelectronicsMOSFET N-CH 600V 25A TO-220FP
Series: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 130 mOhm @ 12.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 100nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 2800pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220FP
from 5,65Additional information
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STW27NM60NDSTMicroelectronicsMOSFET N-CH 600V 21A TO-247
Series: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 160W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
from 4,23
from 8,97		Additional information
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STF21NM60NDSTMicroelectronicsMOSFET N-CH 600V 17A TO-220FP
Series: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 220 mOhm @ 8.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  Input Capacitance (Ciss) @ Vds: 1800pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 30W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220FP
from 2,94Additional information
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STP8NM60NDSTP8NM60NDSTMicroelectronicsMOSFET N-CH 600V 7A TO-220
Series: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 700 mOhm @ 3.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  Input Capacitance (Ciss) @ Vds: 560pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 70W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
from 1,04
from 2,66		Additional information
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STD8NM60NDSTD8NM60NDSTMicroelectronicsMOSFET N-CH 600V 7A DPAK
Series: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 700 mOhm @ 3.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  Input Capacitance (Ciss) @ Vds: 560pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 70W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
from 1,37
from 2,93		Additional information
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STP20NM60FDSTP20NM60FDSTMicroelectronicsMOSFET N-CH 600V 20A TO-220
Series: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 290 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 37nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 192W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 2,58Additional information
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STB12NM50NDSTMicroelectronicsMOSFET N-CH 500V 11A D2PAK
Series: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 850pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 2,49
from 4,59		Additional information
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STB21NM60NDSTB21NM60NDSTMicroelectronicsMOSFET N-CH 600V 17A D2PAK
Series: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 220 mOhm @ 8.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  Input Capacitance (Ciss) @ Vds: 1800pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 140W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 2,70
from 3,04		Additional information
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STB12NM50FDT4STB12NM50FDT4STMicroelectronicsMOSFET N-CH 500V 12A D2PAK
Series: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 1000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 160W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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STB23NM60NDSTB23NM60NDSTMicroelectronicsMOSFET N-CH 600V 19.5A D2PAK
Series: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 70nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 19.5A  ·  Input Capacitance (Ciss) @ Vds: 2050pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 3,46Additional information
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