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Discrete Semiconductor Products  ·  MOSFETs - Single
 
STB20NM60-1

- Dimensional Drawing

STB20NM60-1 — MOSFET N-CH 600V 20A I2PAK

ManufacturerSTMicroelectronics
Harmful substancesRoHS   Lead-free
SeriesMDmesh™
Rds On (Max) @ Id, Vgs290 mOhm @ 10A, 10V
Drain to Source Voltage (Vdss)600V
Gate Charge (Qg) @ Vgs54nC @ 10V
Current - Continuous Drain (Id) @ 25° C20A
Input Capacitance (Ciss) @ Vds1500pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max192W
Mounting TypeThrough Hole
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
Found under name497-5383-5, STB20NM60-1-ND
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
STB21NM60NSTB21NM60NSTMicroelectronicsMOSFET N-CH 600V 17A D2PAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 220 mOhm @ 8.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 66nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  Input Capacitance (Ciss) @ Vds: 1900pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 140W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 2,90
from 5,81		Additional information
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STW14NM65NSTW14NM65NSTMicroelectronicsMOSFET N-CH 650V 12A TO-247
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 45nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
from 2,56
from 5,80		Additional information
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STW20NM60STW20NM60STMicroelectronicsMOSFET N-CH 600V 20A TO-247
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 290 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 54nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 1500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 192W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
from 2,56
from 5,80		Additional information
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STP11NM80STP11NM80STMicroelectronicsMOSFET N-CH 800V 11A TO-220
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 43.6nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 1630pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 2,56
from 5,80		Additional information
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STY60NM60STY60NM60STMicroelectronicsMOSFET N-CH 600V 60A MAX247
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 55 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 266nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 7300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 560W  ·  Mounting Type: Through Hole  ·  Package / Case: MAX247™
from 11,25
from 21,60		Additional information
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STF30NM60NSTMicroelectronicsMOSFET N-CH 600V 25A TO-220FP
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 130 mOhm @ 12.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 91nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 2700pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220FP
from 6,32Additional information
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STD5NM50T4STD5NM50T4STMicroelectronicsMOSFET N-CH 500V 7.5A DPAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7.5A  ·  Input Capacitance (Ciss) @ Vds: 415pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
from 1,16
from 2,48		Additional information
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STW25NM60NSTW25NM60NSTMicroelectronicsMOSFET N-CH 600V 21A TO-247
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 84nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 2400pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 160W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
from 4,20
from 7,80		Additional information
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STB50N25M5STMicroelectronicsMOSFET N-CH 250V 28A D2PAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 65 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 44nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 28A  ·  Input Capacitance (Ciss) @ Vds: 1700pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 110W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 2,16
from 2,43		Additional information
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STB12NM50NSTB12NM50NSTMicroelectronicsMOSFET N-CH 500V 11A D2PAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 940pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 1,56
from 1,69		Additional information
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STP20NM50STP20NM50STMicroelectronicsMOSFET N-CH 500V 20A TO-220
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 56nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 1480pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 192W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 2,37
from 5,37		Additional information
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STE48NM60STE48NM60STMicroelectronicsMOSFET N-CH 650V 48A ISOTOP
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 110 mOhm @ 22.5A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 134nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 48A  ·  Input Capacitance (Ciss) @ Vds: 3800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 450W  ·  Mounting Type: Chassis Mount  ·  Package / Case: ISOTOP
Additional information
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STP8NM60STP8NM60STMicroelectronicsMOSFET N-CH 650V 8A TO-220
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 1,13
from 2,40		Additional information
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STP16N65M5STP16N65M5STMicroelectronicsMOSFET N-CH 650V 12A TO-220
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 299 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 45nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 1250pF @ 100V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
from 1,65
from 3,92		Additional information
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STP15NM60NSTP15NM60NSTMicroelectronicsMOSFET N-CH 600V 14A TO-220
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 299 mOhm @ 7A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 37nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 1250pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 2,11
from 4,08		Additional information
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STB20NM50T4STB20NM50T4STMicroelectronicsMOSFET N-CH 550V 20A D2PAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 550V  ·  Gate Charge (Qg) @ Vgs: 56nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 1480pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 192W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 2,00
from 2,16		Additional information
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STW45NM50STW45NM50STMicroelectronicsMOSFET N-CH 500V 45A TO-247
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 22.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 117nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 45A  ·  Input Capacitance (Ciss) @ Vds: 3700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 417W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
from 6,31
from 12,87		Additional information
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STP21N65M5STMicroelectronicsMOSFET N-CH 650V 17A TO-220
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 190 mOhm @ 8.5A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 50nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  Input Capacitance (Ciss) @ Vds: 1950pF @ 100V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 2,45
from 5,80		Additional information
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STB25NM60N-1STB25NM60N-1STMicroelectronicsMOSFET N-CH 600V 21A I2PAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 84nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 2400pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 160W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
from 3,53Additional information
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STP13NM50NSTP13NM50NSTMicroelectronicsMOSFET N-CH 500V 12A TO-220
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 960pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 1,54
from 2,98		Additional information
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STP30NM50NSTP30NM50NSTMicroelectronicsMOSFET N-CH 500V 27A TO-220
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 115 mOhm @ 13.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 94nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 27A  ·  Input Capacitance (Ciss) @ Vds: 2740pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 190W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
from 4,78
from 10,14		Additional information
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STB8NM60T4STB8NM60T4STMicroelectronicsMOSFET N-CH 650V 8A D2PAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 2,19
from 3,56		Additional information
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STP7NM80STP7NM80STMicroelectronicsMOSFET N-CH 800V 6.5A TO-220
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 3.25A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.5A  ·  Input Capacitance (Ciss) @ Vds: 620pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
from 2,33
from 5,51		Additional information
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STW43NM60NSTW43NM60NSTMicroelectronicsMOSFET N-CH 600V 35A TO-247
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 88 mOhm @ 17.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 130nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  Input Capacitance (Ciss) @ Vds: 4200pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 255W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
from 6,25
from 12,74		Additional information
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STP8NM50FPSTP8NM50FPSTMicroelectronicsMOSFET N-CH 550V 8A TO-220FP
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 550V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 415pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
from 1,05
from 2,24		Additional information
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