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Discrete Semiconductor Products  ·  MOSFETs - Single
 
STB20NM50-1

- Dimensional Drawing

STB20NM50-1 — MOSFET N-CH 550V 20A I2PAK

ManufacturerSTMicroelectronics
Harmful substancesRoHS   Lead-free
SeriesMDmesh™
Rds On (Max) @ Id, Vgs250 mOhm @ 10A, 10V
Drain to Source Voltage (Vdss)550V
Gate Charge (Qg) @ Vgs56nC @ 10V
Current - Continuous Drain (Id) @ 25° C20A
Input Capacitance (Ciss) @ Vds1480pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max192W
Mounting TypeThrough Hole
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
Found under name497-5382-5, STB20NM50-1-ND
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
STW26NM60NSTW26NM60NSTMicroelectronicsMOSFET N-CH 600V 20A TO-247
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 165 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 1800pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 140W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
from 3,06
from 6,50		Additional information
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STD16N65M5STD16N65M5STMicroelectronicsMOSFET N-CH 650V 12A DPAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 299 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 45nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 1250pF @ 100V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
from 1,74
from 1,86		Additional information
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STP11NM60ASTP11NM60ASTMicroelectronicsMOSFET N-CH 600V 11A TO-220
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 49nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 1211pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 110W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 1,66
from 3,77		Additional information
Find at suppliers
STP21NM60NSTP21NM60NSTMicroelectronicsMOSFET N-CH 600V 17A TO-220
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 220 mOhm @ 8.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 66nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  Input Capacitance (Ciss) @ Vds: 1900pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 140W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 3,04
from 6,53		Additional information
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STW55NM50NSTW55NM50NSTMicroelectronicsMOSFET N-CH 500V 54A TO-247
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 54 mOhm @ 27A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 180nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 54A  ·  Input Capacitance (Ciss) @ Vds: 5800pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 350W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
from 8,10
from 16,20		Additional information
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STB23NM60NSTB23NM60NSTMicroelectronicsMOSFET N-CH 600V 19A D2PAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 180 mOhm @ 9.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 19A  ·  Input Capacitance (Ciss) @ Vds: 2050pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 4,59
from 8,16		Additional information
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STF13NM60NSTF13NM60NSTMicroelectronicsMOSFET N-CH 600V 11A TO-220FP
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 790pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220FP
from 1,47
from 3,48		Additional information
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STP11NM60NSTP11NM60NSTMicroelectronicsMOSFET N-CH 600V 10A TO-220
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 31nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 850pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 1,64
from 3,71		Additional information
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STD5NM60T4STD5NM60T4STMicroelectronicsMOSFET N-CH 600V 5A DPAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 96W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
from 1,14
from 2,44		Additional information
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STB21NM50NSTB21NM50NSTMicroelectronicsMOSFET N-CH 500V 18A D2PAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 65nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 1950pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 140W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 4,09
from 7,53		Additional information
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STD7NM80STD7NM80STMicroelectronicsMOSFET N-CH 800V 6.5A DPAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 3.25A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.5A  ·  Input Capacitance (Ciss) @ Vds: 620pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
from 2,40
from 5,60		Additional information
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STP21NM50NSTP21NM50NSTMicroelectronicsMOSFET N-CH 500V 18A TO-220
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 65nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 1950pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 140W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 2,77Additional information
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STB42N65M5STB42N65M5STMicroelectronicsMOSFET N-CH 650V 33A D2PAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 79 mOhm @ 16.5A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 100nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 33A  ·  Input Capacitance (Ciss) @ Vds: 4650pF @ 100V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 190W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 5,46
from 6,05		Additional information
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STF8NM60NSTF8NM60NSTMicroelectronicsMOSFET N-CH 600V 7A TO-220FP
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 650 mOhm @ 3.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 19nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  Input Capacitance (Ciss) @ Vds: 560pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
from 1,11
from 2,72		Additional information
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STW11NM80STW11NM80STMicroelectronicsMOSFET N-CH 800V 11A TO-247
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 43.6nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 1630pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
from 3,07
from 6,96		Additional information
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STP32N65M5STMicroelectronicsMOSFET N-CH 650V 24A TO-220
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 119 mOhm @ 12A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 72nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 24A  ·  Input Capacitance (Ciss) @ Vds: 3320pF @ 100V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 3,43
from 7,28		Additional information
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STP25NM50NSTP25NM50NSTMicroelectronicsMOSFET N-CH 500V 22A TO-220
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 84nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  Input Capacitance (Ciss) @ Vds: 2565pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 160W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 3,38
from 6,89		Additional information
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STY80NM60NSTY80NM60NSTMicroelectronicsMOSFET N-CH 600V 74A MAX247
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 35 mOhm @ 37A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 360nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 74A  ·  Input Capacitance (Ciss) @ Vds: 10100pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 447W  ·  Mounting Type: Through Hole  ·  Package / Case: MAX247™
from 18,60
from 34,10		Additional information
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STW30NM60NDSTW30NM60NDSTMicroelectronicsMOSFET N-CH 600V 25A TO-247
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 130 mOhm @ 12.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 100nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 2800pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 190W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
from 5,36
from 10,92		Additional information
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STP9NM50NSTP9NM50NSTMicroelectronicsMOSFET N-CH 500V 7.5A TO-220
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 560 mOhm @ 3.7A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7.5A  ·  Input Capacitance (Ciss) @ Vds: 570pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 70W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 0,95
from 2,20		Additional information
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STB11NM60-1STB11NM60-1STMicroelectronicsMOSFET N-CH 650V 11A I2PAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 1000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 160W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
from 1,52
from 3,05		Additional information
Find at suppliers
STF16NM50NSTF16NM50NSTMicroelectronicsMOSFET N-CH 500V 15A TO-220FP
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 260 mOhm @ 7.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 1200pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 30W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
from 1,96
from 3,79		Additional information
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STB20NM60T4STB20NM60T4STMicroelectronicsMOSFET N-CH 600V 20A D2PAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 290 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 54nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 1500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 192W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 3,99
from 7,35		Additional information
Find at suppliers
STP20NM60STP20NM60STMicroelectronicsMOSFET N-CH 600V 20A TO-220
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 290 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 54nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 1500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 192W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 2,56
from 5,80		Additional information
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STB21NM50N-1STB21NM50N-1STMicroelectronicsMOSFET N-CH 500V 18A I2PAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 65nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 1950pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 140W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
from 2,67
from 5,16		Additional information
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