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Photo | Name | Manufacturer | Technical parameters | Prices (rub.) | Buy |
BSS138N E7854 | Infineon Technologies | MOSFET N-CH 60V 230MA SOT-23 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 1.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 230mA · Input Capacitance (Ciss) @ Vds: 41pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23 | Additional information Find at suppliers | ||
![]() | BSP320S E6433 | Infineon Technologies | MOSFET N-CH 60V 2.9A SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.9A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.9A · Input Capacitance (Ciss) @ Vds: 340pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | Additional information Find at suppliers | |
![]() | BSS87 E6433 | Infineon Technologies | MOSFET N-CH 240V 260MA SOT-89 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 260mA, 10V · Drain to Source Voltage (Vdss): 240V · Gate Charge (Qg) @ Vgs: 5.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 260mA · Input Capacitance (Ciss) @ Vds: 97pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SOT-89 | Additional information Find at suppliers | |
![]() | SPB80N10L G | Infineon Technologies | MOSFET N-CH 100V 80A TO-263 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 14 mOhm @ 58A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 240nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 4540pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 250W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | from 1,69 from 3,96 | Additional information Find at suppliers |
IPB70N10SL-16 | Infineon Technologies | MOSFET N-CH 100V 70A TO263-3 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 16 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 240nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 70A · Input Capacitance (Ciss) @ Vds: 4540pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 250W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | from 1,13 | Additional information Find at suppliers | |
![]() | BSP296E6327 | Infineon Technologies | MOSFET N-CH 100V 1.1A SOT223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.1A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 17.2nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.1A · Input Capacitance (Ciss) @ Vds: 364pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.79W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | Additional information Find at suppliers | |
![]() | BSP171PE6327 | Infineon Technologies | MOSFET P-CH 60V 1.9A SOT223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.9A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 20nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.9A · Input Capacitance (Ciss) @ Vds: 460pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | Additional information Find at suppliers | |
![]() | SPB47N10 | Infineon Technologies | MOSFET N-CH 100V 47A D2PAK Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 33 mOhm @ 33A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 105nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 47A · Input Capacitance (Ciss) @ Vds: 2500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 175W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Additional information Find at suppliers | |
![]() | BUZ32 | Infineon Technologies | MOSFET N-CH 200V 9.5A TO220AB Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 400 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 200V · Current - Continuous Drain (Id) @ 25° C: 9.5A · Input Capacitance (Ciss) @ Vds: 530pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 75W · Mounting Type: Through Hole · Package / Case: TO-220AB | from 0,70 from 1,74 | Additional information Find at suppliers |
![]() | SPB10N10 G | Infineon Technologies | MOSFET N-CH 100V 10.3A D2PAK Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 170 mOhm @ 7.8A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 19.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10.3A · Input Capacitance (Ciss) @ Vds: 426pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Additional information Find at suppliers | |
![]() | SPD30P06P | Infineon Technologies | MOSFET P-CH 60V 30A DPAK Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 75 mOhm @ 21.5A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 48nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1535pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Additional information Find at suppliers | |
![]() | BSS123 L6327 | Infineon Technologies | MOSFET N-CH 100V 170MA SOT-23 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 2.67nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 170mA · Input Capacitance (Ciss) @ Vds: 69pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23 | from 0,05 from 0,07 | Additional information Find at suppliers |
![]() | BSP89 L6327 | Infineon Technologies | MOSFET N-CH 240V 350MA SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V · Drain to Source Voltage (Vdss): 240V · Gate Charge (Qg) @ Vgs: 6.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 350mA · Input Capacitance (Ciss) @ Vds: 140pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | from 0,20 from 0,24 | Additional information Find at suppliers |
![]() | BSP613P | Infineon Technologies | MOSFET P-CH 60V 2.9A SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 130 mOhm @ 2.9A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 33nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.9A · Input Capacitance (Ciss) @ Vds: 875pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | Additional information Find at suppliers | |
SPP47N10L | Infineon Technologies | MOSFET N-CH 100V 47A TO-220 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 26 mOhm @ 33A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 135nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 47A · Input Capacitance (Ciss) @ Vds: 2500pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 175W · Mounting Type: Through Hole · Package / Case: TO-220 | Additional information Find at suppliers | ||
![]() | BSP149 L6327 | Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10v · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 14nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 660mA · Input Capacitance (Ciss) @ Vds: 430pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | from 0,66 from 1,18 | Additional information Find at suppliers |
BSS131 L6327 | Infineon Technologies | MOSFET N-CH 240V .11A SOT-23 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 14 Ohm @ 100mA, 10V · Drain to Source Voltage (Vdss): 240V · Gate Charge (Qg) @ Vgs: 3.1nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 110mA · Input Capacitance (Ciss) @ Vds: 77pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23 | from 0,09 | Additional information Find at suppliers | |
![]() | SPD09P06PL | Infineon Technologies | MOSFET P-CH 60V 9.7A DPAK Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 250 mOhm @ 6.8A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 21nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9.7A · Input Capacitance (Ciss) @ Vds: 450pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 42W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | from 0,26 from 0,28 | Additional information Find at suppliers |
SPD18P06P G | Infineon Technologies | MOSFET P-CH 60V 18.6A TO252-3 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 130 mOhm @ 13.2A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 33nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18.6A · Input Capacitance (Ciss) @ Vds: 860pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 80W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | from 0,53 | Additional information Find at suppliers | |
![]() | BSP373 L6327 | Infineon Technologies | MOSFET N-CH 100V 1.7A SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.7A, 10V · Drain to Source Voltage (Vdss): 100V · Current - Continuous Drain (Id) @ 25° C: 1.7A · Input Capacitance (Ciss) @ Vds: 550pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | from 0,27 from 0,32 | Additional information Find at suppliers |
![]() | BSP88E6327 | Infineon Technologies | MOSFET N-CH 240V 350MA SOT223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V · Drain to Source Voltage (Vdss): 240V · Gate Charge (Qg) @ Vgs: 6.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 350mA · Input Capacitance (Ciss) @ Vds: 95pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | Additional information Find at suppliers | |
![]() | BSP315PE6327T | Infineon Technologies | MOSFET P-CH 60V 1.17A SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 800 mOhm @ 1.17A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 7.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.17A · Input Capacitance (Ciss) @ Vds: 160pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | from 0,31 from 0,69 | Additional information Find at suppliers |
![]() | BSP296 L6327 | Infineon Technologies | MOSFET N-CH 100V 1.1A SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.1A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 17.2nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.1A · Input Capacitance (Ciss) @ Vds: 364pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.79W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | from 0,63 from 0,94 | Additional information Find at suppliers |
![]() | SPB08P06P G | Infineon Technologies | MOSFET P-CH 60V 8.8A TO-263 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.2A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8.8A · Input Capacitance (Ciss) @ Vds: 420pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 42W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | from 0,39 | Additional information Find at suppliers |
BSR92P L6327 | Infineon Technologies | MOSFET P-CH 250V 140MA SC-59 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 11 Ohm @ 140mA, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 4.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 140mA · Input Capacitance (Ciss) @ Vds: 109pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: SC-59 | from 0,18 | Additional information Find at suppliers |
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