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RJK0371DSP-00#J0

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RJK0371DSP-00#J0 — MOSFET N-CH 30V 8A 8-SOP

ManufacturerRenesas Technology America
Harmful substancesRoHS   Lead-free
Rds On (Max) @ Id, Vgs19 mOhm @ 4A, 10V
Drain to Source Voltage (Vdss)30V
Gate Charge (Qg) @ Vgs3.8nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C8A
Input Capacitance (Ciss) @ Vds590pF @ 10V
FET PolarityN-Channel
FET FeatureStandard
Power - Max1.8W
Mounting TypeSurface Mount
Package / Case8-SOP
Found under nameRJK0371DSP-00#J0TR
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
RJK0328DPB-00#J0RJK0328DPB-00#J0Renesas Technology AmericaMOSFET N-CH 30V 60A LFPAK
Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 42nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 6380pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 65W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
from 0,74
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HAT2168HRenesas Technology AmericaMOSFET N-CH 30V 30A LFPAK
Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1730pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 15W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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2SK214Renesas Technology AmericaMOSFET N-CH 160V 500MA TO-220AB
Drain to Source Voltage (Vdss): 160V  ·  Current - Continuous Drain (Id) @ 25° C: 500mA  ·  Input Capacitance (Ciss) @ Vds: 90pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB
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HAT2201RHAT2201RRenesas Technology AmericaMOSFET N-CH 100V 6A 8-SOP
Rds On (Max) @ Id, Vgs: 43 mOhm @ 3A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 21nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6A  ·  Input Capacitance (Ciss) @ Vds: 1450pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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2SK2221-ERenesas Technology AmericaMOSFET N-CH 200V 8A TO-3P
Drain to Source Voltage (Vdss): 200V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 600pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P
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HAT2116H-EL-ERenesas Technology AmericaMOSFET N-CH 30V 30A LFPAK
Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 26nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1650pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 15W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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2SJ162-ERenesas Technology AmericaMOSFET P-CH 160V 7A TO-3P
Drain to Source Voltage (Vdss): 160V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  Input Capacitance (Ciss) @ Vds: 900pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P
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RJK0396DPA-00#J53Renesas Technology AmericaMOSFET N-CH 30V 30A W-PAK
Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 9nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1330pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 28W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
from 0,26
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HAT2068RHAT2068RRenesas Technology AmericaMOSFET N-CH 30V 14A 8-SOP
Rds On (Max) @ Id, Vgs: 9 mOhm @ 7A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 26nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 1650pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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HAT2140HRenesas Technology AmericaMOSFET N-CH 100V 25A LFPAK
Rds On (Max) @ Id, Vgs: 16 mOhm @ 12.5A, 10v  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 105nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 6500pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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HAT2209RHAT2209RRenesas Technology AmericaMOSFET N-CH 30V 7A 8-SOP
Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 3.9nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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RJK0364DPA-00#J0RJK0364DPA-00#J0Renesas Technology AmericaMOSFET N-CH 30V 35A WPAK
Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 17.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  Input Capacitance (Ciss) @ Vds: 1600pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 35W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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HAT2171H-EL-ERenesas Technology AmericaMOSFET N-CH 40V 40A 5LFPAK
Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 52nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 3750pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 25W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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HAT2173NRenesas Technology AmericaMOSFET N-CH 100V 25A LFPAK-I
Rds On (Max) @ Id, Vgs: 15.3 mOhm @ 12.5A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 61nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 4350pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK-i
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2SK214-ERenesas Technology AmericaMOSFET N-CH 160V 0.5A TO-220AB
Drain to Source Voltage (Vdss): 160V  ·  Current - Continuous Drain (Id) @ 25° C: 500mA  ·  Input Capacitance (Ciss) @ Vds: 90pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB
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HAT2170HRenesas Technology AmericaMOSFET N-CH 40V 45A 5LFPAK
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 22.5A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 62nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 45A  ·  Input Capacitance (Ciss) @ Vds: 4650pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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2SK1058Renesas Technology AmericaMOSFET N-CH 160V 7A TO-3P
Drain to Source Voltage (Vdss): 160V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  Input Capacitance (Ciss) @ Vds: 600pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P
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FS30AS-2-T13#B00Renesas Technology AmericaMOSFET N-CH 100V 30A MP-3A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1250pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 35W  ·  Mounting Type: Surface Mount  ·  Package / Case: MP-3A
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HAT2199RHAT2199RRenesas Technology AmericaMOSFET N-CH 30V 11A 8-SOP
Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 7.5nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 1060pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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RJK0394DPA-00#J53Renesas Technology AmericaMOSFET N-CH 30V 35A W-PAK
Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 17.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 15.5nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  Input Capacitance (Ciss) @ Vds: 2430pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 35W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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HAT2143H-EL-ERenesas Technology AmericaMOSFET N-CH 30V 40A 5LFPAK
Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 40nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 2450pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 20W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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HAT2141HRenesas Technology AmericaMOSFET N-CH 100V 15A LFPAK
Rds On (Max) @ Id, Vgs: 27.5 mOhm @ 7.5A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 46nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 3200pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 20W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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HAT2165N-EL-ERenesas Technology AmericaMOSFET N-CH 30V 55A LFPAKI
Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 27.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 33nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 55A  ·  Input Capacitance (Ciss) @ Vds: 5180pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK-i
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FS70SM-2Renesas Technology AmericaMOSFET N-CH 100V 70A TO-3P
Rds On (Max) @ Id, Vgs: 20 mOhm @ 35A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Current - Continuous Drain (Id) @ 25° C: 70A  ·  Input Capacitance (Ciss) @ Vds: 6540pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P
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2SK2315TYTRRenesas Technology AmericaMOSFET N-CH 60V 2A UPAK
Rds On (Max) @ Id, Vgs: 450 mOhm @ 1A, 4V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 173pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: UPAK
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