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IRLI630G

- Dimensional Drawing

IRLI630G — MOSFET N-CH 200V 6.2A TO220FP

ManufacturerVishay/Siliconix
Rds On (Max) @ Id, Vgs400 mOhm @ 3.7A, 5V
Drain to Source Voltage (Vdss)200V
Gate Charge (Qg) @ Vgs40nC @ 10V
Current - Continuous Drain (Id) @ 25° C6.2A
Input Capacitance (Ciss) @ Vds1100pF @ 25V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max35W
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
Found under name*IRLI630G
Analogous by characteristics
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Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 35 mOhm @ 1A, 4.5V  ·  Drain to Source Voltage (Vdss): 8V  ·  Gate Charge (Qg) @ Vgs: 26nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 11.7A  ·  Input Capacitance (Ciss) @ Vds: 1640pF @ 4V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 6.25W  ·  Mounting Type: Surface Mount  ·  Package / Case: 4-MICRO FOOT®CSP
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IRL630STRRIRL630STRRVishay/SiliconixMOSFET N-CH 200V 9A D2PAK
Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 5V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 40nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  Input Capacitance (Ciss) @ Vds: 1100pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRF624SIRF624SVishay/SiliconixMOSFET N-CH 250V 4.4A D2PAK
Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 2.6A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.4A  ·  Input Capacitance (Ciss) @ Vds: 260pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SI4850EY-T1-E3SI4850EY-T1-E3Vishay/SiliconixMOSFET N-CH 60V 6A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 22 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 27nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.7W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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IRFRC20TRRPBFVishay/SiliconixMOSFET N-CH 600V 2A DPAK
Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.2A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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Rds On (Max) @ Id, Vgs: 400 mOhm @ 8.4A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 74nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 2200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 190W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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IRFRC20TRLVishay/SiliconixMOSFET N-CH 600V 2A DPAK
Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.2A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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SI1472DH-T1-E3SI1472DH-T1-E3Vishay/SiliconixMOSFET N-CH 30V 5.6A SC70-6
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 57 mOhm @ 4.2A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.6A  ·  Input Capacitance (Ciss) @ Vds: 380pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
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IRFP340IRFP340Vishay/SiliconixMOSFET N-CH 400V 11A TO-247AC
Rds On (Max) @ Id, Vgs: 550 mOhm @ 6.6A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 62nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 1400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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IRFP244IRFP244Vishay/SiliconixMOSFET N-CH 250V 15A TO-247AC
Rds On (Max) @ Id, Vgs: 280 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 63nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 1400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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IRFZ10PBFIRFZ10PBFVishay/SiliconixMOSFET N-CH 60V 10A TO-220AB
Rds On (Max) @ Id, Vgs: 200 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 43W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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Rds On (Max) @ Id, Vgs: 2 Ohm @ 3.6A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 190nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.1A  ·  Input Capacitance (Ciss) @ Vds: 2800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 190W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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IRF9640LVishay/SiliconixMOSFET P-CH 200V 11A TO-262
Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 44nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 1200pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 3W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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SI4463BDY-T1-E3SI4463BDY-T1-E3Vishay/SiliconixMOSFET P-CH 20V 9.8A 8-SOIC
Rds On (Max) @ Id, Vgs: 11 mOhm @ 13.7A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 56nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 9.8A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
from 0,68
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IRF740LIRF740LVishay/SiliconixMOSFET N-CH 400V 10A TO-220AB
Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 39nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 1100pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRFR010TRRVishay/SiliconixMOSFET N-CH 50V 8.2A DPAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.2A  ·  Input Capacitance (Ciss) @ Vds: 250pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRLR8103TRLVishay/SiliconixMOSFET N-CH 30V 89A DPAK
Rds On (Max) @ Id, Vgs: 7 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 50nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 89A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 89W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRFBC30ASIRFBC30ASVishay/SiliconixMOSFET N-CH 600V 3.6A D2PAK
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 23nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.6A  ·  Input Capacitance (Ciss) @ Vds: 510pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 74W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFPS35N50LPBFIRFPS35N50LPBFVishay/SiliconixMOSFET N-CH 500V 34A SUPER247
Rds On (Max) @ Id, Vgs: 145 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 230nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 34A  ·  Input Capacitance (Ciss) @ Vds: 5580pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 450W  ·  Mounting Type: Through Hole  ·  Package / Case: Super-247
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IRFIBC40GPBFIRFIBC40GPBFVishay/SiliconixMOSFET N-CH 600V 3.5A TO220FP
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.1A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.5A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRFI730GIRFI730GVishay/SiliconixMOSFET N-CH 400V 3.7A TO220FP
Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.1A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.7A  ·  Input Capacitance (Ciss) @ Vds: 700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 35W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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SI4427BDY-T1-E3SI4427BDY-T1-E3Vishay/SiliconixMOSFET P-CH 30V 9.7A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 12.6A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 70nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 9.7A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
from 1,03
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IRFIBC30GPBFIRFIBC30GPBFVishay/SiliconixMOSFET N-CH 600V 2.5A TO220FP
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 1.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 31nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.5A  ·  Input Capacitance (Ciss) @ Vds: 660pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 35W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRFD210IRFD210Vishay/SiliconixMOSFET N-CH 200V 600MA 4-DIP
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 360mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 8.2nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 600mA  ·  Input Capacitance (Ciss) @ Vds: 140pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1W  ·  Mounting Type: Through Hole  ·  Package / Case: 4-DIP, HVMDIP
from 1,24Additional information
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IRFR9024IRFR9024Vishay/SiliconixMOSFET P-CH 60V 8.8A DPAK
Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.3A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 19nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.8A  ·  Input Capacitance (Ciss) @ Vds: 570pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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