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Discrete Semiconductor Products  ·  MOSFETs - Single
 
IRF1310NPBF

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- Dimensional Drawing

IRF1310NPBF — MOSFET N-CH 100V 42A TO-220AB

ManufacturerInternational Rectifier
Harmful substancesRoHS   Lead-free
SeriesHEXFET®
Rds On (Max) @ Id, Vgs36 mOhm @ 22A, 10V
Drain to Source Voltage (Vdss)100V
Gate Charge (Qg) @ Vgs110nC @ 10V
Current - Continuous Drain (Id) @ 25° C42A
Input Capacitance (Ciss) @ Vds1900pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max160W
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
Found under name*IRF1310NPBF
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IRFZ44NPBFIRFZ44NPBFInternational RectifierMOSFET N-CH 55V 49A TO-220AB
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 17.5 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 63nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 49A  ·  Input Capacitance (Ciss) @ Vds: 1470pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 94W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 1.75 mOhm @ 195A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 240nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 195A  ·  Input Capacitance (Ciss) @ Vds: 9200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 380W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-262
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Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 260 mOhm @ 8.4A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 35nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 810pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 144W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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