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Discrete Semiconductor Products  ·  MOSFETs - Single
 
IRC540PBF

IRC540PBF — MOSFET N-CH 100V 28A TO-220-5

ManufacturerVishay/Siliconix
Harmful substancesRoHS   Lead-free
SeriesHEXFET®
Rds On (Max) @ Id, Vgs77 mOhm @ 17A, 10V
Drain to Source Voltage (Vdss)100V
Gate Charge (Qg) @ Vgs69nC @ 10V
Current - Continuous Drain (Id) @ 25° C28A
Input Capacitance (Ciss) @ Vds1300pF @ 25V
FET PolarityN-Channel
FET FeatureCurrent Sensing
Power - Max150W
Mounting TypeThrough Hole
Package / CaseTO-220-5 (Straight Leads)
Found under name*IRC540PBF
Analogous by characteristics
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Series: HEXFET®  ·  Drain to Source Voltage (Vdss): 400V  ·  Current - Continuous Drain (Id) @ 25° C: 1.6A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRC830IRC830Vishay/SiliconixMOSFET N-CH 500V 4.5A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.5A  ·  Input Capacitance (Ciss) @ Vds: 610pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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IRFPC30IRFPC30Vishay/SiliconixMOSFET N-CH 600V 4.3A TO-247AC
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.6A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 31nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.3A  ·  Input Capacitance (Ciss) @ Vds: 630pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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IRFIB6N60APBFIRFIB6N60APBFVishay/SiliconixMOSFET N-CH 600V 5.5A TO220FP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 750 mOhm @ 3.3A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 49nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.5A  ·  Input Capacitance (Ciss) @ Vds: 1400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 60W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRC730PBFIRC730PBFVishay/SiliconixMOSFET N-CH 400V 5.5A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.5A  ·  Input Capacitance (Ciss) @ Vds: 700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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IRFIB8N50KIRFIB8N50KVishay/SiliconixMOSFET N-CH 500V 6.7A TO220FP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 350 mOhm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 89nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.7A  ·  Input Capacitance (Ciss) @ Vds: 2160pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRC840PBFIRC840PBFVishay/SiliconixMOSFET N-CH 500V 8A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 67nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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IRFSL31N20DTRRVishay/SiliconixMOSFET N-CH 200V 31A TO-262
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 82 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 31A  ·  Input Capacitance (Ciss) @ Vds: 2370pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.1W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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IRFP360IRFP360Vishay/SiliconixMOSFET N-CH 400V 23A TO-247AC
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 200 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 210nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 23A  ·  Input Capacitance (Ciss) @ Vds: 4500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 280W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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IRFIB5N65APBFIRFIB5N65APBFVishay/SiliconixMOSFET N-CH 650V 5.1A TO220FP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 930 mOhm @ 3.1A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 48nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.1A  ·  Input Capacitance (Ciss) @ Vds: 1417pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 60W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRFIB8N50KPBFIRFIB8N50KPBFVishay/SiliconixMOSFET N-CH 500V 6.7A TO220FP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 350 mOhm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 89nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.7A  ·  Input Capacitance (Ciss) @ Vds: 2160pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRFPC48IRFPC48Vishay/SiliconixMOSFET N-CH 600V 8.9A TO-247AC
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 820 mOhm @ 5.3A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.9A  ·  Input Capacitance (Ciss) @ Vds: 1800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 170W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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IRLBA3803IRLBA3803Vishay/SiliconixMOSFET N-CH 30V 179A SUPER-220
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 5 mOhm @ 71A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 140nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 179A  ·  Input Capacitance (Ciss) @ Vds: 5000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 270W  ·  Mounting Type: Through Hole  ·  Package / Case: Super-220™
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IRFP460PIRFP460PVishay/SiliconixMOSFET N-CH 500V 20A TO-247AC
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 270 mOhm @ 12A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 210nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 4200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 280W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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IRFR010TRRVishay/SiliconixMOSFET N-CH 50V 8.2A DPAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.2A  ·  Input Capacitance (Ciss) @ Vds: 250pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRF5801Vishay/SiliconixMOSFET N-CH 200V 600MA 6-TSOP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 360mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 3.9nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 600mA  ·  Input Capacitance (Ciss) @ Vds: 88pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
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IRLR014TRRVishay/SiliconixMOSFET N-CH 60V 7.7A DPAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 8.4nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 7.7A  ·  Input Capacitance (Ciss) @ Vds: 400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRC640PBFIRC640PBFVishay/SiliconixMOSFET N-CH 200V 18A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 70nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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IRFD010IRFD010Vishay/SiliconixMOSFET N-CH 50V 1.7A 4-DIP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 200 mOhm @ 860mA, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.7A  ·  Input Capacitance (Ciss) @ Vds: 250pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1W  ·  Mounting Type: Through Hole  ·  Package / Case: 4-DIP, HVMDIP
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IRL3502LVishay/SiliconixMOSFET N-CH 20V 110A TO-262
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 7 mOhm @ 64A, 7V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 110A  ·  Input Capacitance (Ciss) @ Vds: 4700pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 140W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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IRCZ34PBFIRCZ34PBFVishay/SiliconixMOSFET N-CH 60V 30A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 50 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 46nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 88W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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IRFD020IRFD020Vishay/SiliconixMOSFET N-CH 50V 2.4A 4-DIP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.4A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 24nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.4A  ·  Input Capacitance (Ciss) @ Vds: 400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1W  ·  Mounting Type: Through Hole  ·  Package / Case: 4-DIP, HVMDIP
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IRFR010TRLVishay/SiliconixMOSFET N-CH 50V 8.2A DPAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.2A  ·  Input Capacitance (Ciss) @ Vds: 250pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRFU9010PBFIRFU9010PBFVishay/SiliconixMOSFET P-CH 50V 5.3A I-PAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.8A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 9.1nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.3A  ·  Input Capacitance (Ciss) @ Vds: 240pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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IRFBC20IRFBC20Vishay/SiliconixMOSFET N-CH 600V 2.2A TO-220AB
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.3A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.2A  ·  Input Capacitance (Ciss) @ Vds: 350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 50W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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