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Photo | Name | Manufacturer | Technical parameters | Prices (rub.) | Buy |
TPC6104(TE85L,F,M) | Toshiba | MOSFET P-CH 20V 4.5A VS6 2-3T1A Rds On (Max) @ Id, Vgs: 40 mOhm @ 2.8A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 19nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 5.5A · Input Capacitance (Ciss) @ Vds: 1430pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 700mW · Mounting Type: Surface Mount · Package / Case: 2-3T1A | from 0,21 | Additional information Find at suppliers | |
2SK2884(TE24L,Q) | Toshiba | MOSFET N-CH 800V 5A TO-220 Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 34nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 1080pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Surface Mount · Package / Case: 2-10S2B | from 1,55 | Additional information Find at suppliers | |
TPCA8105(TE12L,Q,M | Toshiba | MOSFET P-CH 12V 6A SOP-8 ADV Rds On (Max) @ Id, Vgs: 33 mOhm @ 3A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 18nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 1600pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: 2-5Q1A | from 0,44 | Additional information Find at suppliers | |
2SK2233 | Toshiba | MOSFET N-CH 60V 45A 2-16C1B Rds On (Max) @ Id, Vgs: 30 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 1800pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | Additional information Find at suppliers | ||
2SK2964(TE12L,F) | Toshiba | MOSFET N-CH 30V 2A PW-MINI Rds On (Max) @ Id, Vgs: 180 mOhm @ 1A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 5.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 140pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: PW-MINI | from 0,28 | Additional information Find at suppliers | |
TPC8106-H(TE12L) | Toshiba | MOSFET P-CH 30V 10A 8-SOP Rds On (Max) @ Id, Vgs: 20 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 52nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 2160pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2.4W · Mounting Type: Surface Mount · Package / Case: 8-SOP | Additional information Find at suppliers | ||
TPCF8B01(TE85L,F) | Toshiba | MOSFET P-CH 20V 2.7A VS-8 Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.4A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 6nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 2.7A · Input Capacitance (Ciss) @ Vds: 470pF @ 10V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 1.35W · Mounting Type: Surface Mount | from 0,33 | Additional information Find at suppliers | |
TPC6001(TE85L,F) | Toshiba | MOSFET N-CH 20V 6A VS-6 Rds On (Max) @ Id, Vgs: 30 mOhm @ 3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 15nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 755pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 700mW · Mounting Type: Surface Mount · Package / Case: VS-6 (SOT-23-6) | Additional information Find at suppliers | ||
TPCA8010-H(TE12LQM | Toshiba | MOSFET N-CH 200V 5.5A SOP-8 ADV Rds On (Max) @ Id, Vgs: 450 mOhm @ 2.7A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 10nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.5A · Input Capacitance (Ciss) @ Vds: 600pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Surface Mount · Package / Case: 2-5Q1A | from 0,63 | Additional information Find at suppliers | |
TPCF8A01(TE85L,F) | Toshiba | MOSFET N-CH 20V 3A VS-8 Rds On (Max) @ Id, Vgs: 49 mOhm @ 1.5A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 7.5nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 3A · Input Capacitance (Ciss) @ Vds: 590pF @ 10V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 330mW · Mounting Type: Surface Mount | from 0,34 from 0,37 | Additional information Find at suppliers | |
TPC8113(TE12L,Q) | Toshiba | MOSFET P-CH 30V 11A SOP8 2-6J1B Rds On (Max) @ Id, Vgs: 10 mOhm @ 5.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 107nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 4500pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: 2-6J1B | from 0,64 | Additional information Find at suppliers | |
2SK3565(Q,M) | Toshiba | MOSFET N-CH 900V 5A TO-220SIS Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 28nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 1150pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: 2-10U1B | from 1,08 from 2,07 | Additional information Find at suppliers | |
TPCA8009-H(TE12L,Q | Toshiba | MOSFET N-CH 150V 7A 8-SOPA Rds On (Max) @ Id, Vgs: 350 mOhm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 10nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 600pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Surface Mount · Package / Case: 8-SOPA | from 1,79 from 3,44 | Additional information Find at suppliers | |
2SK2602 | Toshiba | MOSFET N-CH 600V 6A 2-16C1B Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 1300pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | Additional information Find at suppliers | ||
2SK2953(F) | Toshiba | MOSFET N-CH 600V 15A 2-16F1B Rds On (Max) @ Id, Vgs: 400 mOhm @ 8A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 80nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 3520pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 90W · Mounting Type: Through Hole · Package / Case: 2-16F1B | from 3,67 from 6,47 | Additional information Find at suppliers | |
2SK3761(M) | Toshiba | MOSFET N-CH 600V 6A TO-220AB Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 28nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 1050pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 74W · Mounting Type: Through Hole · Package / Case: TO-220AB | Additional information Find at suppliers | ||
TPCA8003-H(TE12L,Q | Toshiba | MOSFET N-CH 30V 35A 8-SOPA Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 35A · Input Capacitance (Ciss) @ Vds: 1465pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 45W · Mounting Type: Surface Mount · Package / Case: 8-SOPA | from 0,78 from 0,83 | Additional information Find at suppliers | |
2SK2398 | Toshiba | MOSFET N-CH 60V 45A 2-16C1B Rds On (Max) @ Id, Vgs: 30 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 1800pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | Additional information Find at suppliers | ||
2SK2614(Q) | Toshiba | MOSFET N-CH 50V 20A 2-7B1B Rds On (Max) @ Id, Vgs: 46 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 900pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: 2-7B1B | Additional information Find at suppliers | ||
2SK2991(Q) | Toshiba | MOSFET N-CH 500V 5A TO-220 Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 780pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Through Hole · Package / Case: 2-10S1B | from 1,11 | Additional information Find at suppliers | |
2SK3437(Q) | Toshiba | MOSFET N-CH 600V 10A SC-67 Rds On (Max) @ Id, Vgs: 1 Ohm @ 5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 28nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 80W · Mounting Type: Through Hole · Package / Case: 2-10S1B | from 2,12 | Additional information Find at suppliers | |
TPCA8022-H(TE12LQM | Toshiba | MOSFET N-CH 100V 22A SOP-8 ADV Rds On (Max) @ Id, Vgs: 26 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 22A · Input Capacitance (Ciss) @ Vds: 2330pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Surface Mount · Package / Case: 2-5Q1A | from 0,85 | Additional information Find at suppliers | |
2SK4015(Q) | Toshiba | MOSFET N-CH 600V 10A TO-220SIS Rds On (Max) @ Id, Vgs: 860 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 42nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: 2-10U1B | from 1,59 | Additional information Find at suppliers | |
2SJ201-Y(F) | Toshiba | MOSFET P-CH 200V 12A TO-3PL Drain to Source Voltage (Vdss): 200V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 1500pF @ 30V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-3P(L) (2-21F1B) | from 4,90 from 7,84 | Additional information Find at suppliers | |
2SK2542 | Toshiba | MOSFET N-CH 500V 8A TO-220AB Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 1300pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 80W · Mounting Type: Through Hole · Package / Case: TO-220AB | Additional information Find at suppliers |
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