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Photo | Name | Manufacturer | Technical parameters | Prices (rub.) | Buy |
2SK3371(TE16L1,NQ) | Toshiba | MOSFET N-CH 600V 1A SC-64 Rds On (Max) @ Id, Vgs: 9 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 9nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1A · Input Capacitance (Ciss) @ Vds: 190pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: 2-7J1B | from 0,38 | Additional information Find at suppliers | |
2SK4012(Q) | Toshiba | MOSFET N-CH 500V 13A SC-67 Rds On (Max) @ Id, Vgs: 400 mOhm @ 6.5A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 50nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 13A · Input Capacitance (Ciss) @ Vds: 2400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: 2-10U1B | from 1,51 | Additional information Find at suppliers | |
2SK3667(Q) | Toshiba | MOSFET N-CH 600V 7.5A SC-67 Rds On (Max) @ Id, Vgs: 1 Ohm @ 4A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 33nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.5A · Input Capacitance (Ciss) @ Vds: 1300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: 2-10U1B | from 1,24 | Additional information Find at suppliers | |
2SK3863(TE16L1,Q) | Toshiba | MOSFET N-CH 500V 5A SC-64 Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 16nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 550pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Surface Mount | from 0,77 | Additional information Find at suppliers | |
2SK2993(TE24L,Q) | Toshiba | MOSFET N-CH 250V 20A TO-220FL Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 100nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 4000pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: TO-220FL | from 1,88 | Additional information Find at suppliers | |
2SK2847(F) | Toshiba | MOSFET N-CH 900V 8A 2-16F1B Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 4A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 58nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 2040pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 85W · Mounting Type: Through Hole · Package / Case: 2-16F1B | from 2,21 | Additional information Find at suppliers | |
TPCF8103(TE85L,F) | Toshiba | MOSFET P-CH 20V 2.7A VS-8 Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.4A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 6nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 2.7A · Input Capacitance (Ciss) @ Vds: 470pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 700mW · Mounting Type: Surface Mount · Package / Case: VS-8 (2-3U1A) | from 0,29 | Additional information Find at suppliers | |
2SK4014(Q) | Toshiba | MOSFET N-CH 900V 6A SC-67 Rds On (Max) @ Id, Vgs: 2 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 1400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: 2-10U1B | from 1,40 | Additional information Find at suppliers | |
TPC8012-H(TE12L,Q) | Toshiba | MOSFET N-CH 200V 1.8A 8-SOP Rds On (Max) @ Id, Vgs: 400 mOhm @ 900mA, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 11nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.8A · Input Capacitance (Ciss) @ Vds: 440pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: 8-SOP | from 0,51 | Additional information Find at suppliers | |
2SJ412(Q) | Toshiba | MOSFET P-CH 100V 16A TO-220FL Rds On (Max) @ Id, Vgs: 210 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 48nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 1100pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 60W · Mounting Type: Through Hole · Package / Case: TO-220 | from 0,98 from 2,35 | Additional information Find at suppliers | |
2SK2399(TE16L1,NQ) | Toshiba | MOSFET N-CH 100V 5A SC-64 Rds On (Max) @ Id, Vgs: 230 mOhm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 22nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 500pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: 2-7J1B | from 0,55 | Additional information Find at suppliers | |
2SK2782(TE16L1,Q) | Toshiba | MOSFET N-CH 60V 20A SC-64 Rds On (Max) @ Id, Vgs: 55 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 880pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 40W · Mounting Type: Surface Mount | from 0,68 | Additional information Find at suppliers | |
TPCA8019-H(TE12LQM | Toshiba | MOSFET N-CH 30V 45A SOP-8 ADV Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 23A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 66nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 6150pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 45W · Mounting Type: Surface Mount · Package / Case: 2-5Q1A | from 0,98 from 1,05 | Additional information Find at suppliers | |
TPCA8023-H(TE12LQM | Toshiba | MOSFET N-CH 30V 20A SOP-8 ADV Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 21nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 21A · Input Capacitance (Ciss) @ Vds: 2150pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 30W · Mounting Type: Surface Mount · Package / Case: 2-5Q1A | from 0,51 | Additional information Find at suppliers | |
2SK3906(Q) | Toshiba | MOSFET N-CH 600V 20A SC-65 Rds On (Max) @ Id, Vgs: 330 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 4250pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | from 4,32 | Additional information Find at suppliers | |
2SK3497(F) | Toshiba | MOSFET N-CH 180V 10A SC-67 Drain to Source Voltage (Vdss): 180V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 2400pF @ 30V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 130W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | from 1,79 | Additional information Find at suppliers | |
2SJ378(TP,Q) | Toshiba | MOSFET P-CH 60V 5A TPS Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 22nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 630pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.3W · Mounting Type: Through Hole | from 0,48 | Additional information Find at suppliers | |
TPCP8005-H(TE85L,F | Toshiba | MOSFET N-CH 30V 11A PS-8 Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 5.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 20nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 2150pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 840mW · Mounting Type: Surface Mount · Package / Case: 2-3V1K | from 0,37 from 0,40 | Additional information Find at suppliers | |
TPC8110(TE12L,Q,M) | Toshiba | MOSFET P-CH 40V 8A SOP8 2-6J1B Rds On (Max) @ Id, Vgs: 25 mOhm @ 4A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 48nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 2180pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: 2-6J1B | from 0,38 | Additional information Find at suppliers | |
2SK2267 | Toshiba | MOSFET N-CH 60V 60A TO-3P(L) Rds On (Max) @ Id, Vgs: 11 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 170nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 60A · Input Capacitance (Ciss) @ Vds: 5400pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-3P(L) (2-21F1B) | Additional information Find at suppliers | ||
TPCF8104(TE85L,F,M | Toshiba | MOSFET P-CH -30V -6A VS-8 Rds On (Max) @ Id, Vgs: 28 mOhm @ 3A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 34nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 1760pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 700mW · Mounting Type: Surface Mount · Package / Case: VS-8 (2-3U1A) | from 0,34 from 0,37 | Additional information Find at suppliers | |
2SK2744 | Toshiba | MOSFET N-CH 50V 45A 2-16C1B Rds On (Max) @ Id, Vgs: 20 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 68nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 2300pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | from 1,78 | Additional information Find at suppliers | |
2SJ619(TE24L,Q) | Toshiba | MOSFET P-CH 100V 16A SC-97 Rds On (Max) @ Id, Vgs: 210 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 48nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 1100pF @ 10V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 75W · Mounting Type: Surface Mount | from 1,67 | Additional information Find at suppliers | |
2SK2313(F) | Toshiba | MOSFET N-CH 60V 60A 2-16C1B Rds On (Max) @ Id, Vgs: 11 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 170nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 60A · Input Capacitance (Ciss) @ Vds: 5400pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | from 2,27 | Additional information Find at suppliers | |
2SJ304(F) | Toshiba | MOSFET P-CH 60V 14A TO-3 Rds On (Max) @ Id, Vgs: 120 mOhm @ 7A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 1200pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: 2-10R1B | from 1,48 | Additional information Find at suppliers |
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