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Discrete Semiconductor Products  ·  JFETs (Junction Field Effect)
 
BFR30LT1G

BFR30LT1G — TRANS JFET N-CH 25V 225MW SOT-23

ManufacturerON Semiconductor
Harmful substancesRoHS   Lead-free
Pay attentionProduct Discontinuation 01/Oct/2008
Current - Drain (Idss) @ Vds (Vgs=0)4mA @ 10V
Drain to Source Voltage (Vdss)25V
FET PolarityN-Channel
Voltage - Cutoff (VGS off) @ Id5V @ 0.5nA
Input Capacitance (Ciss) @ Vds5pF @ 10V
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Power - Max225mW
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
BFR30LT1BFR30LT1ON SemiconductorTRANS JFET N-CH 25V 225MW SOT-23
Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  FET Polarity: N-Channel  ·  Voltage - Cutoff (VGS off) @ Id: 5V @ 0.5nA  ·  Input Capacitance (Ciss) @ Vds: 5pF @ 10V  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3  ·  Power - Max: 225mW
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