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Discrete Semiconductor Products  ·  IGBTs - Single
 
HGT1S12N60A4S9A

- Dimensional Drawing

HGT1S12N60A4S9A — IGBT SMPS N-CHAN 600V TO-263AB

ManufacturerFairchild Semiconductor
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)600V
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 12A
Current - Collector (Ic) (Max)54A
Power - Max167W
Input TypeStandard
Mounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)
Found under nameHGT1S12N60A4S9ADKR
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
HGT1S12N60A4DSHGT1S12N60A4DSFairchild SemiconductorIGBT SMPS N-CH 600V D2PAK
Voltage - Collector Emitter Breakdown (Max): 600V  ·  Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A  ·  Current - Collector (Ic) (Max): 54A  ·  Power - Max: 167W  ·  Input Type: Standard  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 1,64
from 2,95		Additional information
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